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Volumn 50, Issue 4 PART 2, 2011, Pages

Improvement in the property of field effect transistor having the HfO 2/Ge structure fabricated by photoassisted metal organic chemical vapor deposition with fluorine treatment

(4) Lee, Dong Hun a Imajo, Hideto a Kanashima, Takeshi a Okuyama, Masanori a

a OSAKA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM LAYERS; ELECTRICAL CHARACTERISTIC; GAS AMBIENTS; GATE FILMS; GATE STACKS; GE SURFACES; INTERFACE STATE; INTERFACE STATE DENSITY; METAL-INSULATOR-SEMICONDUCTORS; METALORGANIC CHEMICAL VAPOR DEPOSITION; N-TYPE GE; TREATMENT METHODS;

DANGLING BONDS; FIELD EFFECT TRANSISTORS; FLUORINE; HAFNIUM; HAFNIUM OXIDES; INDUSTRIAL CHEMICALS; LOGIC GATES; METAL INSULATOR BOUNDARIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIS DEVICES; MISFET DEVICES; ORGANIC CHEMICALS; ORGANOMETALLICS; OXYGEN; OXYGEN VACANCIES; SEMICONDUCTOR DEVICES;

GERMANIUM;

EID: 79955433463 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.50.04DA11 Document Type: Article

Times cited : (4)

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