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Volumn 108, Issue 10, 2010, Pages

Physical origins of mobility enhancement of Ge p-channel metal-insulator-semiconductor field effect transistors with Si passivation layers

(6) Taoka, Noriyuki a,c Mizubayashi, Wataru a Morita, Yukinori a Migita, Shinji a Ota, Hiroyuki a Takagi, Shinichi a,b

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

b UNIVERSITY OF TOKYO (Japan)

c NONE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DISTRIBUTIONS; CHANNEL REGION; COULOMB SCATTERING; EFFECTIVE FIELD; GATE VOLTAGES; INTERFACE CHARGE; INVERSION LAYER; METAL-INSULATOR-SEMICONDUCTORS; MOBILE CARRIERS; MOBILITY ENHANCEMENT; MOBILITY MEASUREMENTS; PASSIVATION LAYER; SCATTERING MECHANISMS; SI/GE; SURFACE ROUGHNESS SCATTERING;

FIELD EFFECT TRANSISTORS; GERMANIUM; METAL INSULATOR BOUNDARIES; MIS DEVICES; MISFET DEVICES; PASSIVATION; SCATTERING; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR INSULATOR BOUNDARIES; SURFACE ROUGHNESS;

CARRIER MOBILITY;

EID: 78650300939 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3512868 Document Type: Conference Paper

Times cited : (22)

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