High mobility Ge pMOSFETs with ∼ 1nm thin EOT using Al 2O3/GeOx/Ge gate stacks fabricated by plasma post oxidation

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2011, Pages 56-57

  Zhang, R ^a   Iwasaki, T ^a   Taoka, N ^a   Takenaka, M ^a   Takagi, S ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE OPERATIONS; GATE STACKS; GE PMOSFET; GE SUBSTRATES; HIGH MOBILITY; OXYGEN PLASMAS; P-MOSFETS; POST-OXIDATION; ULTRA-THIN;

ALUMINUM; LOGIC GATES; MOSFET DEVICES; OXIDATION;

GERMANIUM;

EID: 80052678081     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. S. Takagi et al., IEDM, pp. 57, 2003.
2. S. Takagi et al., Microelectron. Eng., vol. 84, pp. 2314, 2007.
3. A. Toriumi et al., Microelectron. Eng., vol. 86, pp. 1571, 2009.
4. Y. Nakakita et al., IEDM, pp. 877, 2008.
5. C. Lee et al., IEDM, pp. 416, 2010.
6. R. Xie et al., IEDM, pp. 393, 2008.
7. J. Mitard et al., VLSI, pp. 82, 2009.
8. Y. Kamata et al. VLSI, pp. 211, 2010.
9. T. Krishnamohan, et al., IEDM pp. 899. 2008
10. S. Dissanayake et al., Appl. Phys. Express 3, 041302, 2010.