Ge p-MOSFETs with scaled ALD La2O3/ZrO2 gate dielectrics

IEEE Transactions on Electron Devices

Volumn 57, Issue 12, 2010, Pages 3295-3302

  Henkel, C ^a   Abermann, S ^b   Bethge, O ^a   Pozzovivo, G ^a   Klang, P ^a   Reiche, M ^c   Bertagnolli, E ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b AIT AUSTRIAN INSTITUTE OF TECHNOLOGY   (Austria)

^c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

Atomic layer deposition (ALD); germanium; La2O3; MOSFET; ZrO2

Indexed keywords

ATOMIC LAYER DEPOSITED; DIELECTRIC THIN FILMS; EQUIVALENT OXIDE THICKNESS; GATE CONTACT; INTERFACE PROPERTY; LA2O3; MOBILITY VALUE; MOS-FET; P-MOSFETS; PASSIVATION LAYER; POST-METALLIZATION ANNEALING; SCHOTTKY BARRIERS; TRAP DENSITY; ZRO2;

ATOMIC LAYER DEPOSITION; ATOMS; DIELECTRIC MATERIALS; GATE DIELECTRICS; GATES (TRANSISTOR); GERMANIUM; HOLE MOBILITY; PASSIVATION; SCHOTTKY BARRIER DIODES; TITANIUM NITRIDE; ZIRCONIUM ALLOYS;

MOSFET DEVICES;

EID: 78650003600     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2081366     Document Type: Article

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