Contact resistivity and Fermi-level pinning in n-type Ge contacts with epitaxial Si-passivation

Applied Physics Letters

Volumn 98, Issue 1, 2011, Pages

  Martens, Koen ^a,b   Rooyackers, R ^b   Firrincieli, A ^a,b   Vincent, B ^b   Loo, R ^b   De Jaeger, B ^b   Meuris, M ^b   Favia, P ^b   Bender, H ^b   Douhard, B ^b   Vandervorst, W ^a,b   Simoen, E ^b   Jurczak, M ^b   Wouters, D J ^a,b   Kittl, J A ^b  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; CONTACT RESISTIVITIES; DOPANT ACTIVATION; DOPING CONCENTRATION; EPITAXIAL SI; FERMI LEVEL PINNING; IN-SITU; KEY FACTORS; MATERIAL PROPERTY; N-TYPE GE; PASSIVATION LAYER; PHYSICAL MODELING; SPECIFIC CONTACT RESISTIVITY;

DOPING (ADDITIVES); ELECTRIC PROPERTIES; ELECTRON MOBILITY; EPITAXIAL GROWTH; GERMANIUM; MODELS; PASSIVATION; PHOSPHORUS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 78651283052     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3530437     Document Type: Article

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