Mobilty modeling of strained germanium (s-Ge) quantum well (QW) heterostructure pMOSFETs

ECS Transactions

Volumn 16, Issue 10, 2009, Pages 397-403

  Krishnamohan, Tejas ^a,d   Pham, Anh Tuan ^c   Jungemann, Christoph ^b   Meinerzhagen, Bernd ^c   Saraswat, Krishna C ^a  

^a Stanford University   (United States)

^b BUNDESWEHR UNIVERSITY MUNICH   (Germany)

^c TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^d INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIGITAL STORAGE; GERMANIUM COMPOUNDS; HOLE MOBILITY; MOSFET DEVICES; PHONONS; POISSON EQUATION; SCHRODINGER EQUATION; SEMICONDUCTOR QUANTUM WELLS; SILICON; SURFACE ROUGHNESS;

ACOUSTIC PHONONS; ALLOY SCATTERING; GE QUANTUM WELL; POISSON-SCHRODINGER EQUATION; QUANTUM CONFINEMENT EFFECTS; SCATTERING MECHANISMS; SWITCHING DELAY; THEORETICAL CALCULATIONS;

SI-GE ALLOYS;

EID: 63149166454     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2986797     Document Type: Conference Paper

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