Thin epitaxial Si films as a passivation method for Ge(1 0 0): Influence of deposition temperature on Ge surface segregation and the high-k/Ge interface quality

Materials Science in Semiconductor Processing

Volumn 9, Issue 4-5 SPEC. ISS., 2006, Pages 679-684

  Leys, F E ^a   Bonzom, R ^a,b   Kaczer, B ^a   Janssens, T ^a   Vandervorst, W ^a,b   De Jaeger, B ^a   Van Steenbergen, J ^a   Martens, K ^a,b   Hellin, D ^a,b   Rip, J ^a   Dilliway, G ^a   Delabie, A ^a   Zimmerman, P ^a,d   Houssa, M ^a   Theuwis, A ^c   Loo, R ^a   Meuris, M ^a   Caymax, M ^a   Heyns, M M ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c UMICORE   (Belgium)

^d INTEL CORPORATION   (United States)

Author keywords

Epitaxy; Ge mosfet; Si passivation; Surface segregation

Indexed keywords

DEPOSITION; FILM GROWTH; MOSFET DEVICES; SECONDARY ION MASS SPECTROMETRY; SILICON;

CHARGE PUMPING MEASUREMENTS; INTERFACE TRAP DENSITY; SI-PASSIVATION; SURFACE SEGREGATION;

THIN FILMS;

EID: 33845189383     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.08.034     Document Type: Article

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