Problems of N-type doped regions in germanium, their solutions, and how to beat the ITRS roadmap

ECS Transactions

Volumn 35, Issue 2, 2011, Pages 185-192

  Duffy, R ^a   Shayesteh, M ^a   White, M ^a   Kearney, J ^a   Kelleher, A M ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON;

ACCESS RESISTANCE; DOPING CONCENTRATION; N-TYPE DOPANTS; N-TYPE JUNCTIONS; ROADMAP;

GERMANIUM;

EID: 79960785001     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3568860     Document Type: Conference Paper

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