Deformation induced holes in Ge-rich SiGe-on-insulator and Ge-on-insulator substrates fabricated by Ge condensation process

Applied Physics Express

Volumn 1, Issue 10, 2008, Pages 1014011-1014013

  Hirashita, Norio ^a,d   Moriyama, Yoshihiko ^a   Nakaharai, Shu ^a   Irisawa, Toshifumi ^a   Sugiyama, Naoharu ^a   Takagi, Shin Ichi ^b,c  

^a TOSHIBA CORPORATION   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

^d OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDENSATION; CONDUCTIVE FILMS; ELECTRIC PROPERTIES; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON ALLOYS;

ELECTRICAL PROPERTIES; GE CONDENSATIONS; HOLE DENSITIES; INSULATOR SUBSTRATES; P-TYPE CONDUCTIONS; SCANNING SPREADING RESISTANCE MICROSCOPIES; SLIP BAND FORMATIONS; SLIP BANDS;

GERMANIUM;

EID: 57649099005     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.1.101401     Document Type: Article

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