Critical factors for enhancement of compressive strain in SGOI layers fabricated by Ge condensation technique

ECS Transactions

Volumn 33, Issue 6, 2010, Pages 501-509

  Takagi, S ^a   Tomiyama, K ^a   Dissanayake, S ^a   Takenaka, M ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDENSATION; FABRICATION; GERMANIUM COMPOUNDS; OXIDATION; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON; STRAIN RELAXATION; SUBSTRATES;

COMPRESSIVE STRAIN; CONDENSATION PROCESS; FUTURE TECHNOLOGIES; INFLUENTIAL FACTORS; OXIDATION TEMPERATURE; RELAXATION BEHAVIORS; STRUCTURAL PARAMETER; SUBSTRATE STRUCTURE;

SI-GE ALLOYS;

EID: 79952641515     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3487580     Document Type: Conference Paper

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