High quality Ge epitaxial layers in narrow channels on Si(001) substrates

Applied Physics Letters

Volumn 96, Issue 10, 2010, Pages

  Wang, G ^a,b   Rosseel, E ^a   Loo, R ^a   Favia, P ^a   Bender, H ^a   Caymax, M ^a   Heyns, M M ^a,b   Vandervorst, W ^a,c  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c KU LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE QUALITY; EPITAXIAL REGROWTH; HIGH GROWTH TEMPERATURES; HIGH QUALITY; IN-CHANNELS; LASER ANNEAL; LOW TEMPERATURE GROWTH; LOW TEMPERATURES; NARROW CHANNEL; OUT-DIFFUSION; RECRYSTALLIZATIONS; SELECTIVE GROWTH; SI (001) SUBSTRATE; TRENCH FILLINGS;

SEMICONDUCTING SILICON COMPOUNDS; SILICON;

GERMANIUM;

EID: 77949675477     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3360231     Document Type: Article

References (17)

1. J. Feng, R. Woo, S. Chen, Y. Liu, P. B. Griffin, and J. D. Plummer, IEEE Electron Device Lett. 28, 637 (2007).
2. H. Sellier, G. P. Lansbergen, J. Caro, S. Rogge, N. Collaert, I. Ferain, M. Jurczak, and S. Biesemans, Appl. Phys. ett. 90, 073502 (2007).
3. M. Yamaguchi, A. Yamamoto, M. Tachikawa, Y. Itoh, and M. Sugo, Appl. Phys. Lett. 53, 2293 (1988).
4. G. Brammertz, Y. Mols, S. Degroote, M. Leys, J. Van Steenbergen, G. Borghs, and M. Caymax, J. Cryst. Growth 297, 204 (2006).
5. T. A. Langdo, C. W. Leitz, M. T. Currie, E. A. Fitzgerald, A. Lochtefeld, and D. A. Antoniadis, Appl. Phys. Lett. 76, 3700 (2000).
6. H. C. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. C. Kimerling, Appl. Phys. Lett. 75, 2909 (1999).
7. J. S. Park, J. Bai, M. Curtin, B. Adekore, M. Carroll, and A. Lochtefeld, Appl. Phys. Lett. 90, 052113 (2007).
8. G. Wang, R. Loo, S. Takeuchi, L. Souriau, J. C. Lin, A. Moussa, H. Bender, B. De Jaeger, P. Ong, W. Lee, M. Meuris, M. Caymax, W. Vandervorst, B. Blanpain, and M. M. Heyns, Thin Solid Films 518, 2538 (2010).
9. A. N. Goldstein, C. M. Ether, and A. P. Alivisatos, Science 256, 1425 (1992).
10. Q. Jiang, Z. Zhang, and Y. W. Wang, Mater. Sci. Eng., A 286, 139 (2000).
11. A. Dargys and J. Kundrotas, Handbook on Physical Properties of Ge, Si, GaAs and InP -Science and Encyclopedia, Vilnius, 1994.
12. R. J. Jaccodine, J. Electrochem. Soc. 110, 524 (1963).
13. L. B. Freund, Int. J. Solids Struct. 32, 911 (1995).
14. A. Pimpinelli and J. Villain, Physics of Crystal Growth (Cambridge University Press, Cambridge, 1998).
15. S. Shimokawa, A. Namiki, M. N. Gamo, and T. Ando, J. Chem. Phys. 113, 6916 (2000).
16. D. J. Eaglesham, F. C. Unterwald, H. Luftman, D. P. Adams, and S. M. Yalisove, J. Appl. Phys. 74, 6615 (1993).
17. J. E. Vasek, Z. Y. Zhang, C. T. Salling, and M. G. Lagally, Phys. Rev. B 51, 17207 (1995).