On the high-field transport and uniaxial stress effect in Ge PFETs

IEEE Transactions on Electron Devices

Volumn 58, Issue 2, 2011, Pages 384-391

  Kobayashi, Masaharu ^a,b   Mitard, Jérǒme ^c   Irisawa, Toshifumi ^a,d   Hoffmann, Thomas Y ^c   Meuris, Marc ^c   Saraswat, Krishna ^a   Nishi, Yoshio ^a   Heyns, Marc ^c  

^a STANFORD UNIVERSITY   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c IMEC   (Belgium)

^d TOSHIBA CORPORATION   (Japan)

Author keywords

Ballistic transport; Ge metaloxidesemiconductor field effect transistor (MOSFET); high field transport; uniaxial stress

Indexed keywords

BALLISTIC TRANSPORTS; BALLISTICITY; CARRIER VELOCITY; DEVICE PERFORMANCE; DRIVE CURRENTS; HIGH FIELD TRANSPORT; HIGH MOBILITY; HIGH-FIELD; QUASI-BALLISTIC TRANSPORT; SHORT CHANNELS; STRAINED-GE; STRAINED-SI; UNIAXIAL STRESS; VELOCITY ENHANCEMENT;

BALLISTICS; CARRIER MOBILITY; ELECTRIC COILS; GERMANIUM; MOSFET DEVICES; TRANSPORT PROPERTIES; VELOCITY;

FIELD EFFECT TRANSISTORS;

EID: 79151474325     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2093530     Document Type: Article

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