Thickness dependence of hole mobility in ultrathin SiGe-channel p-MOSFETs

IEEE Transactions on Electron Devices

Volumn 55, Issue 10, 2008, Pages 2687-2694

  Chléirigh, Cáit Ní ^a,b   Theodore, N David ^c   Fukuyama, H ^d   Mure, S ^d   Ehrke, H Ulrich ^e   Domenicucci, A ^f   Hoyt, Judy L ^g  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b Pixtronix Inc   (United States)

^c FREESCALE SEMICONDUCTOR INC   (United States)

^d KOBE STEEL LTD   (Japan)

^e CAMECA   (United States)

^f IBM   (United States)

^g USA   (United States)

Author keywords

Critical thickness; Germanium; Heterostructure; MOSFET; Silicon

Indexed keywords

GERMANIUM; HOLE MOBILITY; LATTICE MISMATCH; MOSFET DEVICES; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON; SILICON ALLOYS;

CHANNEL THICKNESS; CRITICAL THICKNESS; GE FRACTION; HETEROSTRUCTURE; LAYER THICKNESSES; MOSFET; OUT-DIFFUSION; P-MOSFETS; STRAINED-SI; STRAINED-SIGE; TEMPERATURE-DEPENDENT MEASUREMENTS; THICKNESS DEPENDENCES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 43549097444     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2003228     Document Type: Article

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