High-hole-mobility silicon germanium on insulator substrates with high crystalline quality obtained by the germanium condensation technique

Journal of the Electrochemical Society

Volumn 156, Issue 3, 2009, Pages

  Souriau, L ^a,b   Nguyen, T ^c   Augendre, E ^d   Loo, R ^a   Terzieva, V ^a   Caymax, M ^a   Cristoloveanu, S ^c   Meuris, M ^a   Vandervorst, W ^a,b  

^a Interuniversitair Micro Electronika Centrum VZW   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c IMEP LAHC   (France)

^d CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CARRIER MOBILITY; CONDENSATION; CRYSTALLINE MATERIALS; ELECTRIC PROPERTIES; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GERMANIUM; HOLE MOBILITY; INERT GASES; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR INSULATOR BOUNDARIES; SEMICONDUCTOR MATERIALS; SILICON ALLOYS; TRANSISTORS;

BURIED OXIDES; CONDENSATION PROCESS; ELECTRICAL PROPERTIES; FIXED CHARGES; GE CONDENSATIONS; GE CONTENTS; HIGH MOBILITIES; HIGH-CRYSTALLINE QUALITIES; INTERFACE TRAPS; LOW-FIELD MOBILITIES; METAL-OXIDE SEMICONDUCTORS; OXIDE CHARGES; SI-GE FILMS; SIGE-ON-INSULATOR SUBSTRATES; SILICON GERMANIUM-ON-INSULATOR SUBSTRATES; STRUCTURAL CHARACTERIZATIONS;

SUBSTRATES;

EID: 59449083449     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3065199     Document Type: Article

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