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Electrochemical and Solid-State Letters

Volumn 13, Issue 11, 2010, Pages

High quality strained Ge epilayers on a Si0.2 Ge0.8 /Ge/Si (100) global strain-tuning platform

(6) Myronov, Maksym a Dobbie, Andy a Shah, Vishal A a Liu, Xue Chao a Nguyen, Van H a Leadley, David R a

a UNIVERSITY OF WARWICK (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROSTRUCTURES; HIGH QUALITY; LAYER THICKNESS; REDUCED PRESSURE CHEMICAL VAPOR DEPOSITION; SI (100) SUBSTRATE; SMOOTH SURFACE; STRAINED-GE; STRUCTURAL QUALITIES; THREADING DISLOCATION DENSITIES;

CHEMICAL VAPOR DEPOSITION; EPILAYERS; EPITAXIAL GROWTH; GERMANIUM; PHOTONIC DEVICES; SILICON;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77956583758 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3482159 Document Type: Article

Times cited : (30)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.