Electrical Activity of Dislocations and Defects in Strained Si and Ge Based Devices

ECS Transactions

Volumn 16, Issue 10, 2009, Pages 513-527

  Simoen, E ^a   Eneman, G ^a,b   Verheyen, P ^a   Loo, R ^a   Gonzalez, M Bargallo ^a,b   Claeys, C ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM COMPOUNDS; POINT DEFECTS; SEMICONDUCTOR JUNCTIONS; STRAINED SILICON; SUBSTRATES;

ELECTRICAL ACTIVITIES; ENGINEERED-SUBSTRATE; MAJOR FACTORS; P-N JUNCTION; RECOMBINATION LIFETIME; STRAINED-SI; THREADING DISLOCATION; VIRTUAL SUBSTRATES;

SI-GE ALLOYS;

EID: 63149083362     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2986808     Document Type: Conference Paper

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