SCOPUS 정보 검색 플랫폼

ECS Transactions

Volumn 35, Issue 3, 2011, Pages 457-464

Junctionless Ge MOSFETs fabricated on 10 nm-thick GeOI substrate

(7) Zhao, D D a,b,c Nishimura, T a,b Lee, C H a,b Ifuku, R a Nagashio, K a,b Kita, K a,b Toriumi, A a,b

a UNIVERSITY OF TOKYO (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

c China (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL INTERFACE; FERMI LEVEL PINNING; FIELD-EFFECT MOBILITIES; GE ON INSULATORS; HEAVILY DOPED; IV CHARACTERISTICS; JUNCTION FORMATION; MOSFETS; P-TYPE; SI NANOWIRE;

GRAPHENE; HOLE MOBILITY; MESFET DEVICES; NANOWIRES;

GERMANIUM;

EID: 79960748004 PISSN: 19385862 EISSN: 19386737 Source Type: Conference Proceeding
DOI: 10.1149/1.3569937 Document Type: Conference Paper

Times cited : (3)

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