Influence of passivating interlayer on Ge/HfO2 and Ge/Al2O3 interface band diagrams

Materials Science in Semiconductor Processing

Volumn 11, Issue 5, 2008, Pages 230-235

  Afanas'ev, V V ^a   Stesmans, A ^a   Delabie, A ^b   Bellenger, F ^b   Houssa, M ^b   Lieten, R R ^b   Merckling, C ^b   Penaud, J ^b   Brunco, D P ^b   Meuris, M ^b  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b IMEC   (Belgium)

Author keywords

Germanium; Interface barrier; Internal photoemission; Photoconductivity

Indexed keywords

BAND DIAGRAMS; BAND GAPS; ENERGY-BAND ALIGNMENT; GERMANIA; INTERFACE BARRIER; INTERNAL PHOTOEMISSION; VALENCE BAND OFFSETS;

COMPOSITE FILMS; HAFNIUM COMPOUNDS; PASSIVATION; PHOTOCONDUCTIVITY; PHOTOEMISSION;

GERMANIUM;

EID: 70349786600     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2008.09.004     Document Type: Article

References (17)

1. Bohm H.F. J Non-Cryst Solids 7 (1972) 192
2. Lange Th., Njorge W., Weis H., Beckers M., and Wuttig M. Thin Solid Films 365 (2000) 82
3. Perego M., Scarel G., Fanciulli M., Fedushkin IL., and Skatova A.A. Appl Phys Lett 90 (2007) 162115
4. Sugawara T., Oshima Y., Sreenivasan R., and McIntyre P.C. Appl Phys Lett 90 (2007) 112912
5. Delabie A., Bellenger F., Houssa M., Conard Th., Van Elshocht S., Caymax M., et al. Appl Phys Lett 91 (2007) 082904
6. Bellenger F., Houssa M., Delabie A., Afanas'ev V.V., Conard Th., Caymax M., et al. J Electrochem Soc 155 (2008) G33
7. Afanas'ev V.V., Stesmans A., Delabie A., Bellenger F., Houssa M., and Meuris M. Appl Phys Lett 92 (2008) 022109
8. Lieten R.R., Degroote S., Kuijk M., and Borghs G. Appl Phys Lett 91 (2007) 222110
9. Afanas'ev V.V., and Stesmans A. J Appl Phys 102 (2007) 081301
10. Afanas'ev V.V. Internal Photoemission Spectroscopy: Principles and Applications (2008), Elsevier, Amsterdam
11. Powell R.J. J Appl Phys 41 (1971) 2424
12. Afanas'ev V.V., and Stesmans A. Mater Sci Semicond Proc 9 (2006) 764
13. Afanas'ev V.V., and Stesmans A. Appl Phys Lett 84 (2004) 3079
14. Afanas'ev V.V., Stesmans A., Chen F., Shi X., and Campbell S.A. Appl Phys Lett 81 (2002) 1053
15. Helman J.S., and Sanchez-Sinencio F. Phys Rev B 7 (1973) 3702
16. Afanas'ev V.V., Houssa M., Stesmans A., and Heyns M.M. J Appl Phys 78 (2001) 3073
17. Molle A., Bhuiyan M.N.K., Tallarida G., and Fanciulli M. Appl Phys Lett 89 (2006) 083504