Acceptorlike behavior of defects in sige alloys grown by molecular beam epitaxy

Japanese Journal of Applied Physics

Volumn 47, Issue 6 PART 1, 2008, Pages 4630-4633

  Satoh, Motoki ^a   Arimoto, Keisuke ^a   Nakagawa, Kiyokazu ^a   Koh, Shinji ^b   Sawano, Kentarou ^c   Shiraki, Yasuhiro ^c   Usami, Noritaka ^d   Nakajima, Kazuo ^d  

^a UNIVERSITY OF YAMANASHI   (Japan)

^b NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^c TOKYO CITY UNIVERSITY   (Japan)

^d TOHOKU UNIVERSITY   (Japan)

Author keywords

Defect; Hall measurements; Molecular beam epitaxy; SiGe

Indexed keywords

CRYSTAL GROWTH; DEFECTS; GERMANIUM; METALLIC COMPOUNDS; MOLECULAR BEAM EPITAXY; MOLECULAR DYNAMICS; POINT DEFECTS; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; SILICON ALLOYS;

COMPOSITION DEPENDENCES; DEFECT STATES; ENERGY LEVELS; HALL MEASUREMENTS; INTRINSIC POINT DEFECTS; MOLECULAR-BEAM EPITAXIES; SI-GE ALLOYS; SIGE; SIGE FILMS; WIDE TEMPERATURE RANGES;

MOLECULAR BEAMS;

EID: 55049083148     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.4630     Document Type: Article

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