Junctionless Ge p-Channel metal-oxide-semiconductor field-effect transistors fabricated on ultrathin ge-on-insulator substrate

Applied Physics Express

Volumn 4, Issue 3, 2011, Pages

  Zhao, Dan Dan ^a,b,c   Nishimura, Tomonori ^a,b   Lee, Choong Hyun ^a,b   Nagashio, Kosuke ^a,b   Kita, Koji ^a,b   Toriumi, Akira ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c Beijing Normal University   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DENSITY; CHANNEL INTERFACE; FIELD-EFFECT MOBILITIES; GE-ON-INSULATOR SUBSTRATES; JUNCTION FORMATION; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; SI NANOWIRE; ULTRA-THIN;

CARRIER MOBILITY; CURRENT VOLTAGE CHARACTERISTICS; GERMANIUM; MESFET DEVICES; MOSFET DEVICES; NANOWIRES;

FIELD EFFECT TRANSISTORS;

EID: 79952499694     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.4.031302     Document Type: Article

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