Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fraction

Applied Physics Letters

Volumn 79, Issue 12, 2001, Pages 1798-1800

  Tezuka, T ^a   Sugiyama, N ^a   Takagi, S ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035903403     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1404409     Document Type: Article

References (19)

1. D. K. Nayak, J. C. S. Woo, J. S. Park, K. L. Wang, and K. P. MacWilliams, Appl. Phys. Lett. 62, 2853 (1993).
2. J. Welser, J. L. Hoyt, S. Takagi, and J. F. Gibbons, Tech. Dig. Int. Electron Devices Meet. 947, 373 (1994).
3. T. Mizuno, S. Takagi, N. Sugiyama, I. Koga, T. Tezuka, K. Usuda, T. Hatakeyama, A. Kurobe, and A. Toriumi, Tech. Dig. Int. Electron Devices Meet. 943, 934 (1999).
4. T. Mizuno, S. Takagi, N. Sugiyama, H. Satake, A. Kurobe, and A. Toriumi, IEEE Electron Device Lett. 21, 230 (2000).
5. R. Oberhuber, G. Zandler, and P. Vogl, Phys. Rev. B 58, 9941 (1998).
6. Y. Ishikawa, N. Shibata, and S. Fukatsu, Appl. Phys. Lett. 75, 983 (1999).
7. T. Mizuno, N. Sugiyama, H. Satake, and S. Takagi, Digest of Technical Papers of the 2000 Symposium on VLSI Technology, Honolulu, 2000 (IEEE, Piscataway, NJ, 2000), p. 210.
8. L. T. Su, J. B. Jacobs, J. E. Chung, and D. A. Antoniadis, IEEE Electron Device Lett. 15, 366 (1994).
9. Y. Omura, S. Nakashima, K. Izumi, and T. Ishii, Tech. Dig. Int. Electron Devices Meet. 977, 675 (1991).
10. A. R. Powell, S. S. Iyer, and F. K. LeGoues, Appl. Phys. Lett. 64, 1856 (1994).
11. K. Brunner, H. Dobler, G. Abstreiter, H. Schäfer, and B. Lustig, Thin Solid Films 321, 245 (1998).
12. F. Y. Huang, M. A. Chu, M. O. Tanner, K. L. Wang, G. D. U'Ren, and M. S. Goorsky, Appl. Phys. Lett. 76, 2680 (2000).
13. F. Y. Huang, Phys. Rev. Lett. 85, 784 (2000).
14. F. K. LeGoues, R. Rosenberg, T. Nguyen, F. Himpsel, and B. S. Meyerson, J. Appl. Phys. 65, 1724 (1989).
15. T. Tezuka, N. Sugiyama, T. Mizuno, M. Suzuki, and S. Takagi, Extended Abstracts of the 2000 International Conference on Solid State Devices and Materials, Sendai, 2000 (Business Center for Academic Societies Japan, Tokyo, 2000), p. 472.
16. T. Tezuka, N. Sugiyama, T. Mizuno, M. Suzuki, and S. Takagi, Jpn. J. Appl. Phys., Part I 40, 2866 (2001).
17. D. C. Houghton, C. J. Gibbings, C. G. Tuppen, M. H. Lyons, and M. A. G. Halliwell, Appl. Phys. Lett. 56, 460 (1990).
18. P. Dorner, W. Gust, B. Predel, U. Roll, A. Lodding, and H. Odelius, Philos. Mag. A 49, 557 (1984).
19. J. C. Tsang, P. M. Mooney, F. Dacol, and J. O. Chu, J. Appl. Phys. 75, 8098 (1994).