Atomic layer deposition of high-dielectrics on sulphur-passivated germanium

Journal of the Electrochemical Society

Volumn 158, Issue 7, 2011, Pages

  Sioncke, S ^a   Lin, H C ^a   Brammertz, G ^a   Delabie, A ^a   Conard, T ^a   Franquet, A ^a   Meuris, M ^a   Struyf, H ^a   De Gendt, S ^a,d   Heyns, M ^a   Fleischmann, C ^b   Temst, K ^b   Vantomme, A ^b   Mller, M ^c   Kolbe, M ^c   Beckhoff, B ^c   Caymax, M ^a  

^a IMEC   (Belgium)

^b KU LEUVEN   (Belgium)

^c PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

^d UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ATOMIC LAYER DEPOSITION; DIELECTRIC MATERIALS; GATE DIELECTRICS; LOGIC GATES; PASSIVATION;

BULK PROPERTIES; EQUIVALENT OXIDE THICKNESS; GERMANIUM SURFACE; HIGH DIELECTRICS; HIGH MOBILITY CHANNELS; HIGH PERMITTIVITY DIELECTRIC; INTERFACE PROPERTY; SILICON CHANNEL;

GERMANIUM;

EID: 79957607519     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3582524     Document Type: Article

References (19)

1. E. Kaxiras, Phys. Rev. B, 43, 6824 (1991). 10.1103/PhysRevB.43.6824
2. M. Houssa, D. Nelis, D. Hellin, G. Pourtois, T. Conard, K. Paredis, K. Vanormelingen, A. Vantomme, M. K. Van Bael, J. Mullens, Appl. Phys. Lett., 90, 222105 (2007). 10.1063/1.2743385 (Pubitemid 46872623)
3. G. W. Anderson, M. C. Hanf, P. R. Norton, Z. H. Lu, and M. J. Graham, Appl. Phys. Lett., 66, 1123 (1995). 10.1063/1.113833
4. P. F. Lyman, O. Sakata, D. L. Marasco, T.-L. Lee, K. D. Breneman, D. T. Keane, and M. J. Bedzyk, Surf. Sci., 462, L594 (2000). 10.1016/S0039-6028(00) 00508-2
5. P. Ma, G. W. Anderson, and P. R. Norton, Surf. Sci., 420, 134 (1999). 10.1016/S0039-6028(98)00777-8
6. C. Fleischmann, S. Sioncke, K. Schouteden, B. Beckhoff, M. Mller, M. Kobe, C. Van Haesendonck, K. Temst, and A. Vantomme, ECS Trans., 25 (3), 421 (2009). 10.1149/1.3204433
7. T. Weser, A. Bogen, B. Konrad, R. D. Schnell, C. A. Schug, and W. Steinmann, Phys. Rev. B, 35, 8184 (1987). 10.1103/PhysRevB.35.8184
8. T. Weser, A. Bogen, B. Konrad, R. D. Schnell, C. A. Schugg, W. Moritz, and W. Steinmann, Surf. Sci., 201, 245 (1988). 10.1016/0039-6028(88)90609-7
9. K. T. Leung, J. L. Terminello, Z. Hussain, X. S. Zhang, T. Hayashi, and D. A. Shirley, Phys. Rev. B, 38, 8241 (1988). 10.1103/PhysRevB.38.8241
10. L. M. Nelen, K. Fuller, and M. Greenlief, Appl. Surf. Sci., 150, 65 (1999). 10.1016/S0169-4332(99)00224-X (Pubitemid 30508745)
11. M. M. Frank, S. J. Koester, M. Copel, J. A. Ott, V. K. Paruchuri, and H. Shang, Appl. Phys. Lett., 89, 112905 (2006). 10.1063/1.2338751 (Pubitemid 44396616)
12. C. Fleischmann, S. Sioncke, S. Couet, K. Schouteden, B. Beckhoff, M. Mller, P. Hnicke, M. Kolbe, C. Van Haesendonck, M. Meuris, J. Electrochem. Soc., 158, H589 (2011). 10.1149/1.3566846
13. F. Senf, U. Flechsig, F. Eggenstein, W. Gudat, R. Klein, H. Rabus, and G. Ulm, J. Synchrotron Radiat., 5, 780 (1997). 10.1107/S0909049597020323
14. B. Beckhoff, R. Fliegauf, M. Kolbe, M. Mller, J. Weser, and G. Ulm, Anal. Chem., 79, 7879 (2007). 10.1021/ac071236p (Pubitemid 47622419)
15. S. Sioncke, C. Fleischmann, D. Lin, E. Vrancken, M. Caymax, M. Meuris, K. Temst, A. Vantomme, M. Mller, M. Kolbe, and B. Beckhoff, Solid State Phenom., To be published.
16. A. Delabie, S. Sioncke, S. Van Elshocht, M. Caymax, G. Pourtois, and K. Pierloot, ECS Trans., 33 (2), 343 (2010). 10.1149/1.3485270
17. A. Delabie, F. Bellenger, M. Houssa, T. Conard, S. Van Elshocht, M. Caymax, M. Heyns, and M. Meuris, Appl. Phys. Lett., 91, 082904 (2007). 10.1063/1.2773759 (Pubitemid 47318977)
18. A. Delabie, D. P. Brunco, T. Conard, P. Favia, H. Bender, A. Franquet, S. Sioncke, W. Vandervorst, S. Van Elshocht, M. Heyns, J. Electrochem. Soc., 155, H937 (2008). 10.1149/1.2979144
19. L. Dennis, G. Brammertz, S. Sioncke, C. Fleischmann, A. Delabie, K. Martens, H. Bender, T. Conard, W. H. Tseng, J. C. Lin, Tech. Dig.-Int. Electron Devices Meet., 2009, 1.