Heavily Ga-doped germanium layers produced by ion implantation and flash lamp annealing: Structure and electrical activation

Journal of Applied Physics

Volumn 107, Issue 5, 2010, Pages

  Heera, V ^a   Mucklich A ^a   Posselt, M ^a   Voelskow, M ^a   Wundisch C ^a   Schmidt, B ^a   Skrotzki, R ^a   Heinig, K H ^a   Herrmannsdorfer T ^a   Skorupa, W ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION VALUE; CROSS-SECTIONAL ELECTRON MICROSCOPY; DOPED LAYERS; ELECTRICAL ACTIVATION; ELECTRICAL PROPERTY; EPITAXIAL REGROWTH; FLASH LAMP ANNEALING; FLUENCES; GA CONTENT; GA DIFFUSION; GA-DOPED; HALL EFFECT MEASUREMENT; ION CHANNELING; OUT-DIFFUSION; P-TYPE; PEAK CONCENTRATIONS; RAPID THERMAL PROCESSOR; RUTHERFORD BACK-SCATTERING SPECTROMETRY; SOLID SOLUBILITIES; TEMPERATURE DEPENDENT; TEMPERATURE RANGE;

ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; GERMANIUM; HALL EFFECT; HIGH ELECTRON MOBILITY TRANSISTORS; ION IMPLANTATION; MAGNETIC FIELD EFFECTS; PLASMAS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SPECTROMETRY;

ANNEALING;

EID: 77949761472     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3309835     Document Type: Article

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