InGaAs and Ge MOSFETs with a common high κ gate dielectric

ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Volumn , Issue , 2010, Pages 1180-1183

  Lee, W C ^a   Lin, T D ^a   Chu, L K ^a   Chang, P ^a   Chang, Y C ^a   Chu, R L ^a   Chiu, H C ^a   Lin, C A ^b   Chang, W H ^a   Chiang, T H ^a   Lee, Y J ^a   Hong, M ^a   Kwo, J ^a,b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE-EQUIVALENT THICKNESS; HIGH QUALITY; HIGH TEMPERATURE; INTERFACIAL DENSITY; MOSFETS; SELF ALIGNED PROCESS; THERMAL STABILITY; ULTRA-HIGH;

CARRIER MOBILITY; FIELD EFFECT TRANSISTORS; GADOLINIUM; GALLIUM; GATE DIELECTRICS; GATES (TRANSISTOR); INTEGRATED CIRCUITS; MOSFET DEVICES; SEMICONDUCTING INDIUM;

GERMANIUM;

EID: 78751515270     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSICT.2010.5667596     Document Type: Conference Paper

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