SCOPUS 정보 검색 플랫폼

Materials Science in Semiconductor Processing

Volumn 29, Issue , 2015, Pages 16-55

Recent advances in ultraviolet photodetectors

(3) Alaie, Z a Nejad, S Mohammad a Yousefi, M H b

a IRAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (Iran)

b Nanolab (Iran)

Author keywords

Nanoparticles; Semiconductors; Thin film; Ultraviolet photodetection

Indexed keywords

INDUSTRIAL RESEARCH; MILITARY APPLICATIONS; NANOPARTICLES; PHOTONS; SEMICONDUCTOR MATERIALS; THIN FILMS;

ENVIRONMENTAL APPLICATIONS; FUTURE RESEARCH DIRECTIONS; NOVEL STRUCTURES; PHOTO DETECTION; PHOTODETECTORS (PDS); REVIEW PAPERS; TECHNICAL DESIGN; ULTRA-VIOLET PHOTODETECTORS;

PHOTODETECTORS;

EID: 84915770619 PISSN: 13698001 EISSN: None Source Type: Journal
DOI: 10.1016/j.mssp.2014.02.054 Document Type: Review

Times cited : (351)

References (315)

1
- 0037397570
- E. Monroy, F. Omnès, F. Calle, Semicond. Sci. Technol. 18 (2003) R33.
- (2003) Semicond. Sci. Technol. , vol.18 , pp. R33
- Monroy, E.¹ Omnès, F.² Calle, F.³

2
- 84907161233
- T. Smiljanic (Ed.), In Tech
- S. Gateva, in: T. Smiljanic (Ed.), Photodetectors, In Tech, 2012.
- (2012) Photodetectors
- Gateva, S.¹

3
- 0037517281
- Springer
- P.N.J. Dennis, Photodetectors: An Introduction to Current Technology. Uptodates in Applied Physics and Electrical Technology, Springer, 1986.
- (1986) Photodetectors: An Introduction to Current Technology. Uptodates in Applied Physics and Electrical Technology
- Dennis, P.N.J.¹

4
- 0004005306
- Wiley
- S.M. Sze, Physics of Semiconductor Devices, second ed. Wiley, 1981.
- (1981) Physics of Semiconductor Devices, Second Ed.
- Sze, S.M.¹

5
- 84915774683
- IEEE
- W. Guosheng, L. Hai, C. Dunjun, R. Fangfang, Z. Rong, Z. Youdou, Photonics Technol. Lett., IEEE 25 (2013) 652-654.
- (2013) Photonics Technol. Lett. , vol.25 , pp. 652-654
- Guosheng, W.¹ Hai, L.² Dunjun, C.³ Fangfang, R.⁴ Rong, Z.⁵ Youdou, Z.⁶

6
- 35348850789
- R.W. Chuang, S.P. Chang, S.J. Chang, Y.Z. Chiou, C.Y. Lu, T.K. Lin, et al., J. Appl. Phys. 102 (2007) 073110-4.
- (2007) J. Appl. Phys. , vol.102 , pp. 073110-073114
- Chuang, R.W.¹ Chang, S.P.² Chang, S.J.³ Chiou, Y.Z.⁴ Lu, C.Y.⁵ Lin, T.K.⁶

7
- 84855973139
- A. Müller, G. Konstantinidis, M. Androulidaki, A. Dinescu, A. Stefanescu, A. Cismaru, et al., Thin Solid Films 520 (2012) 2158-2161.
- (2012) Thin Solid Films , vol.520 , pp. 2158-2161
- Müller, A.¹ Konstantinidis, G.² Androulidaki, M.³ Dinescu, A.⁴ Stefanescu, A.⁵ Cismaru, A.⁶

8
- 0032635514
- J.T. Torvik, J.I. Pankove, B.J. Van Zeghbroeck, IEEE Trans. Electron Devices 46 (1999) 1326-1331.
- (1999) IEEE Trans. Electron Devices , vol.46 , pp. 1326-1331
- Torvik, J.T.¹ Pankove, J.I.² Van Zeghbroeck, B.J.³

9
- 27744604400
- R.X. Wang, L.C. Yang, Y.M. Zhang, S.J. Xu, K. Fu, B.S. Zhang, et al., Appl. Phys. Lett. (2013) 102:.
- (2013) Appl. Phys. Lett. , pp. 102
- Wang, R.X.¹ Yang, L.C.² Zhang, Y.M.³ Xu, S.J.⁴ Fu, K.⁵ Zhang, B.S.⁶

10
- 84915782739
- L. Hai-Feng, W. Guo-Sheng, L. Hai, R. Fang-Fang, C. Dun-Jun, Z. Rong, et al., Chin. Phys. Lett. 30 (2013) 017302.
- (2013) Chin. Phys. Lett. , vol.30 , pp. 017302
- Hai-Feng, L.¹ Guo-Sheng, W.² Hai, L.³ Fang-Fang, R.⁴ Dun-Jun, C.⁵ Rong, Z.⁶

11
- 84859531045
- K. You, H. Jiang, D. Li, X. Sun, H. Song, Y. Chen, et al., Appl. Phys. Lett. 100 (2012) 121109-4.
- (2012) Appl. Phys. Lett. , vol.100 , pp. 121109-121114
- You, K.¹ Jiang, H.² Li, D.³ Sun, X.⁴ Song, H.⁵ Chen, Y.⁶

12
- 84915756811
- IEEE
- H. Zheng-Da, W. Wen-Yin, C. Shoou-Jinn, H. Yuan-Fu, C. Chiu-Jung, H. Ting-Jen, et al., Sens. J., IEEE 13 (2013) 1187-1191.
- (2013) Sens. J. , vol.13 , pp. 1187-1191
- Zheng-Da, H.¹ Wen-Yin, W.² Shoou-Jinn, C.³ Yuan-Fu, H.⁴ Chiu-Jung, C.⁵ Ting-Jen, H.⁶

13
- 84915760913
- H. Chao-Wei, C. Yung-Feng, S. Yan-Kuin, IEEE J. Quantum Electron. 50 (2014) 35-41.
- (2014) IEEE J. Quantum Electron. , vol.50 , pp. 35-41
- Chao-Wei, H.¹ Yung-Feng, C.² Yan-Kuin, S.³

14
- 79960717733
- F. Xie, H. Lu, D. Chen, R. Zhang, Y. Zheng, M.S.M. GaN, Phys. Status Solidi C 8 (2011) 2473-2475.
- (2011) M.S.M. GaN, Phys. Status Solidi C , vol.8 , pp. 2473-2475
- Xie, F.¹ Lu, H.² Chen, D.³ Zhang, R.⁴ Zheng, Y.⁵

15
- 79956044260
- E. Monroy, T. Palacios, O. Hainaut, F. Omnes, F. Calle, J.F. Hochedez, Appl. Phys. Lett. 80 (2002) 3198-3200.
- (2002) Appl. Phys. Lett. , vol.80 , pp. 3198-3200
- Monroy, E.¹ Palacios, T.² Hainaut, O.³ Omnes, F.⁴ Calle, F.⁵ Hochedez, J.F.⁶

16
- 0041591210
- Y. Tian, S.-J. Chua, H. Wang, Solid-State Electron. 47 (2003) 1863-1867.
- (2003) Solid-State Electron. , vol.47 , pp. 1863-1867
- Tian, Y.¹ Chua, S.-J.² Wang, H.³

17
- 58749092007
- A. Müller, G. Konstantinidis, M. Dragoman, D. Neculoiu, A. Dinescu, M. Androulidaki, et al., Microelectron. J. 40 (2009) 319-321.
- (2009) Microelectron. J. , vol.40 , pp. 319-321
- Müller, A.¹ Konstantinidis, G.² Dragoman, M.³ Neculoiu, D.⁴ Dinescu, A.⁵ Androulidaki, M.⁶

18
- 0036890571
- Y.-Z. Chiou, Y.-K. Su, S.-J. Chang, Y.-C. Lin, C.-S. Chang, C.-H. Chen, Solid-State Electron. 46 (2002) 2227-2229.
- (2002) Solid-State Electron. , vol.46 , pp. 2227-2229
- Chiou, Y.-Z.¹ Su, Y.-K.² Chang, S.-J.³ Lin, Y.-C.⁴ Chang, C.-S.⁵ Chen, C.-H.⁶

19
- 0037472161
- Y.-Z. Chiou, J.-R. Chiou, Y.-K. Su, S.-J. Chang, B.-R. Huang, C.-S. Chang, et al., Mater. Chem. Phys. 80 (2003) 201-204.
- (2003) Mater. Chem. Phys. , vol.80 , pp. 201-204
- Chiou, Y.-Z.¹ Chiou, J.-R.² Su, Y.-K.³ Chang, S.-J.⁴ Huang, B.-R.⁵ Chang, C.-S.⁶

20
- 84876404376
- S. Biondo, W. Vervisch, L. Ottaviani, J. Appl. Phys. (2012) 111.
- (2012) J. Appl. Phys. , pp. 111
- Biondo, S.¹ Vervisch, W.² Ottaviani, L.³

21
- 21544470376
- M. Asif Khan, J.N. Kuznia, D.T. Olson, M. Blasingame, A.R. Bhattarai, Appl. Phys. Lett. 63 (1993) 2455-2456.
- (1993) Appl. Phys. Lett. , vol.63 , pp. 2455-2456
- Asif Khan, M.¹ Kuznia, J.N.² Olson, D.T.³ Blasingame, M.⁴ Bhattarai, A.R.⁵

22
- 0033221325
- E. Monroy, F. Calle, E. Muñoz, B. Beaumont, F. Omnès, P. Gibart, Phys. Status Solidi A 176 (1999) 141-145.
- (1999) Phys. Status Solidi A , vol.176 , pp. 141-145
- Monroy, E.¹ Calle, F.² Muñoz, E.³ Beaumont, B.⁴ Omnès, F.⁵ Gibart, P.⁶

23
- 0035451653
- E. Monroy, F. Calle, J.L. Pau, E. Muñoz, F. Omnès, B. Beaumont, et al., J. Cryst. Growth 230 (2001) 537-543.
- (2001) J. Cryst. Growth , vol.230 , pp. 537-543
- Monroy, E.¹ Calle, F.² Pau, J.L.³ Muñoz, E.⁴ Omnès, F.⁵ Beaumont, B.⁶

24
- 77957571259
- P.C. Chang, Y.K. Su, K.J. Lee, C.L. Yu, S.J. Chang, C.H. Liu, J. Alloys Compd. 504 (Supplement 1) (2010) S429-S431.
- (2010) J. Alloys Compd. , vol.504 , pp. S429-S431
- Chang, P.C.¹ Su, Y.K.² Lee, K.J.³ Yu, C.L.⁴ Chang, S.J.⁵ Liu, C.H.⁶

25
- 33947582426
- Y. Zhou, C. Ahyi, C.-C. Tin, J. Williams, M. Park, D.-J. Kim, et al., Appl. Phys. Lett. 90 (2007) 121118.
- (2007) Appl. Phys. Lett. , vol.90 , pp. 121118
- Zhou, Y.¹ Ahyi, C.² Tin, C.-C.³ Williams, J.⁴ Park, M.⁵ Kim, D.-J.⁶

26
- 33846967763
- D.G. Zhao, D.S. Jiang, J.J. Zhu, Z.S. Liu, S.M. Zhang, J.W. Liang, et al., Appl. Phys. Lett. 90 (2007) 062106.
- (2007) Appl. Phys. Lett. , vol.90 , pp. 062106
- Zhao, D.G.¹ Jiang, D.S.² Zhu, J.J.³ Liu, Z.S.⁴ Zhang, S.M.⁵ Liang, J.W.⁶

27
- 84915785661
- Z. De-Gang, J. De-Sheng, L. Zong-Shun, Z. Jian-Jun, W. Hui, Z. Shu-Ming, et al., Chin. Phys. Lett. 26 (2009) 058501.
- (2009) Chin. Phys. Lett. , vol.26 , pp. 058501
- De-Gang, Z.¹ De-Sheng, J.² Zong-Shun, L.³ Jian-Jun, Z.⁴ Hui, W.⁵ Shu-Ming, Z.⁶

28
- 0038443548
- S.J. Chang, M.L. Lee, J.K. Sheu, W.C. Lai, Y.K. Su, C.S. Chang, et al., IEEE Electron Device Lett. 24 (2003) 212-214.
- (2003) IEEE Electron Device Lett. , vol.24 , pp. 212-214
- Chang, S.J.¹ Lee, M.L.² Sheu, J.K.³ Lai, W.C.⁴ Su, Y.K.⁵ Chang, C.S.⁶

29
- 34548487475
- Y.D. Jhou, S.J. Chang, Y.K. Su, Y.Y. Lee, C.H. Liu, H.C. Lee, Appl. Phys. Lett. 91 (2007) 103506-3.
- (2007) Appl. Phys. Lett. , vol.91 , pp. 103506-103513
- Jhou, Y.D.¹ Chang, S.J.² Su, Y.K.³ Lee, Y.Y.⁴ Liu, C.H.⁵ Lee, H.C.⁶

30
- 84870567657
- IEEE
- F. Xie, H. Lu, D. Chen, F. Ren, R. Zhang, Y. Zheng, Photonics Technol. Lett., IEEE 24 (2012) 2203-2205.
- (2012) Photonics Technol. Lett. , vol.24 , pp. 2203-2205
- Xie, F.¹ Lu, H.² Chen, D.³ Ren, F.⁴ Zhang, R.⁵ Zheng, Y.⁶

31
- 0029369545
- Q. Chen, M.A. Khan, C.J. Sun, J.W. Yang, Electron. Lett. 31 (1995) 1781-1782.
- (1995) Electron. Lett. , vol.31 , pp. 1781-1782
- Chen, Q.¹ Khan, M.A.² Sun, C.J.³ Yang, J.W.⁴

32
- 79955020090
- L. Pomortseva, Semiconductors 45 (2011) 436-444.
- (2011) Semiconductors , vol.45 , pp. 436-444
- Pomortseva, L.¹

33
- 76549092113
- D.G. Zhao, D.S. Jiang, J.J. Zhu, H. Wang, Z.S. Liu, S.M. Zhang, et al., J. Alloys Compd. 492 (2010) 300-302.
- (2010) J. Alloys Compd. , vol.492 , pp. 300-302
- Zhao, D.G.¹ Jiang, D.S.² Zhu, J.J.³ Wang, H.⁴ Liu, Z.S.⁵ Zhang, S.M.⁶

34
- 57649213650
- Photoresponse simulation of visible blind GaN/AlGaN p-i-n photodiode
- X.D. Wang, W.D. Hu, X.S. Chen, L. Wang, X.Y. Li, W. Lu, Photoresponse simulation of visible blind GaN/AlGaN p-i-n photodiode, in: Proceedings of the 10th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), 2010, pp. 31-32.
- Proceedings of the 10th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), 2010 , pp. 31-32
- Wang, X.D.¹ Hu, W.D.² Chen, X.S.³ Wang, L.⁴ Li, X.Y.⁵ Lu, W.⁶

35
- 84890545076
- Dependence of electrical field and photoresponse on multiplication region thickness for GaN APDs
- W. Jingjing, S. Zhaoqi, S. Shiwei, W. Mingzai, H. Gang, L. Guang Dependence of electrical field and photoresponse on multiplication region thickness for GaN APDs. Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on2013. p. 29-30.
- (2013) Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on , pp. 29-30
- Jingjing, W.¹ Zhaoqi, S.² Shiwei, S.³ Mingzai, W.⁴ Gang, H.⁵ Guang, L.⁶

36
- 79951678925
- F. Xie, H. Lu, X. Xiu, D. Chen, P. Han, R. Zhang, et al., Solid-State Electron. 57 (2011) 39-42.
- (2011) Solid-State Electron. , vol.57 , pp. 39-42
- Xie, F.¹ Lu, H.² Xiu, X.³ Chen, D.⁴ Han, P.⁵ Zhang, R.⁶

37
- 59649117757
- M. Zhao, J. Bao, X. Fan, F. Gu, Y. Guo, Y. Zhang, et al., Phys. B: Condens. Matter 404 (2009) 275-277.
- (2009) Phys. B: Condens. Matter , vol.404 , pp. 275-277
- Zhao, M.¹ Bao, J.² Fan, X.³ Gu, F.⁴ Guo, Y.⁵ Zhang, Y.⁶

38
- 84885142791
- K.M.A. Saron, M.R. Hashim, M.A. Farrukh, Superlattices Microstruct. 64 (2013) 88-97.
- (2013) Superlattices Microstruct. , vol.64 , pp. 88-97
- Saron, K.M.A.¹ Hashim, M.R.² Farrukh, M.A.³

39
- 77955586841
- L. Rigutti, M. Tchernycheva, A. De Luna Bugallo, G. Jacopin, F.H. Julien, L.F. Zagonel, et al., Nano Lett. 10 (2010) 2939-2943.
- (2010) Nano Lett. , vol.10 , pp. 2939-2943
- Rigutti, L.¹ Tchernycheva, M.² De Luna Bugallo, A.³ Jacopin, G.⁴ Julien, F.H.⁵ Zagonel, L.F.⁶

40
- 77955786227
- Y. Nakano, N. Matsuki, Y. Irokawa, M. Sumiya, Phys. Status Solidi C 7 (2010) 2007-2009.
- (2010) Phys. Status Solidi C , vol.7 , pp. 2007-2009
- Nakano, Y.¹ Matsuki, N.² Irokawa, Y.³ Sumiya, M.⁴

41
- 84883199469
- M. Kumar, C.Y. Lee, H. Sekiguchi, H. Okada, A. Wakahara, Semicond. Sci. Technol. 28 (2013) 094005.
- (2013) Semicond. Sci. Technol. , vol.28 , pp. 094005
- Kumar, M.¹ Lee, C.Y.² Sekiguchi, H.³ Okada, H.⁴ Wakahara, A.⁵

42
- 38549137284
- B. Butun, T. Tut, E. Ulker, T. Yelboga, E. Ozbay, Appl. Phys. Lett. 92 (2008) 033507-3.
- (2008) Appl. Phys. Lett. , vol.92 , pp. 033507-033513
- Butun, B.¹ Tut, T.² Ulker, E.³ Yelboga, T.⁴ Ozbay, E.⁵

43
- 79959390484
- M. Martens, J. Schlegel, P. Vogt, F. Brunner, R. Lossy, J. Wurfl, et al., Appl. Phys. Lett. 98 (2011) 211114.
- (2011) Appl. Phys. Lett. , vol.98 , pp. 211114
- Martens, M.¹ Schlegel, J.² Vogt, P.³ Brunner, F.⁴ Lossy, R.⁵ Wurfl, J.⁶

44
- 84865249136
- L. Ming-Lun, Y. Yu-Hsiang, T. Shang-Ju, IEEE J. Quantum Electron. 48 (2012) 1305-1309.
- (2012) IEEE J. Quantum Electron. , vol.48 , pp. 1305-1309
- Ming-Lun, L.¹ Yu-Hsiang, Y.² Shang-Ju, T.³

45
- 84858828156
- F. González-Posada, R. Songmuang, M. Den Hertog, E. Monroy, Phys. Status Solidi C 9 (2012) 642-645.
- (2012) Phys. Status Solidi C , vol.9 , pp. 642-645
- González-Posada, F.¹ Songmuang, R.² Den Hertog, M.³ Monroy, E.⁴

46
- 84915773847
- Meeting Abstracts, MA2007-02:1263
- Y. Zhang, D. Yoo, J.-B. Limb, J.-H. Ryou, R.D. Dupuis, S.-C. Shen, et al., Performance evaluation of III-nitride avalanche photodiodes grown on SiC and GaN substrates, Meeting Abstracts, 2007, MA2007-02:1263.
- (2007) Performance Evaluation of III-nitride Avalanche Photodiodes Grown on SiC and GaN Substrates
- Zhang, Y.¹ Yoo, D.² Limb, J.-B.³ Ryou, J.-H.⁴ Dupuis, R.D.⁵ Shen, S.-C.⁶

47
- 77951241044
- T. Tut, M. Gokkavas, E. Ozbay, Phys. Status Solidi C 5 (2008) 2316-2319.
- (2008) Phys. Status Solidi C , vol.5 , pp. 2316-2319
- Tut, T.¹ Gokkavas, M.² Ozbay, E.³

48
- 41349106161
- K.T. Lam, P.C. Chang, S.J. Chang, C.L. Yu, Y.C. Lin, Y.X. Sun, et al., Sens. Actuators A: Phys. 143 (2008) 191-195.
- (2008) Sens. Actuators A: Phys. , vol.143 , pp. 191-195
- Lam, K.T.¹ Chang, P.C.² Chang, S.J.³ Yu, C.L.⁴ Lin, Y.C.⁵ Sun, Y.X.⁶

49
- 27744604400
- C.-J. Lee, Y.-J. Kwon, C.-H. Won, J.-H. Lee, S.-H. Hahm, Appl. Phys. Lett. (2013) 103:.
- (2013) Appl. Phys. Lett. , pp. 103
- Lee, C.-J.¹ Kwon, Y.-J.² Won, C.-H.³ Lee, J.-H.⁴ Hahm, S.-H.⁵

50
- 84890487508
- 3 layer
- 3 layer, in: Proceedings of the IEEE International Conference of 2013 on Electron Devices and Solid-State Circuits (EDSSC), 2013, pp. 1-2.
- Proceedings of the IEEE International Conference of 2013 on Electron Devices and Solid-State Circuits (EDSSC), 2013 , pp. 1-2
- Chang-Ju, L.¹ Hyeon-Gu, C.² Chul-Ho, W.³ Jung-Hee, L.⁴ Sung-Ho, H.⁵

51
- 84900497260
- A. Rostami, N. Ravanbaksh, S. Golmohammadi, K. Abedi, Int. J. Numer. Model.: Electron. Netw. Devices Fields 27 (2014) 309-317.
- (2014) Int. J. Numer. Model.: Electron. Netw. Devices Fields , vol.27 , pp. 309-317
- Rostami, A.¹ Ravanbaksh, N.² Golmohammadi, S.³ Abedi, K.⁴

52
- 84915753007
- IEEE
- D. Ke Xiu, C. Dun Jun, L. Hai, L. Bin, H. Ping, Z. Rong, et al., Photonics Technol. Lett., IEEE 25 (2013) 1510-1513.
- (2013) Photonics Technol. Lett. , vol.25 , pp. 1510-1513
- Ke Xiu, D.¹ Dun Jun, C.² Hai, L.³ Bin, L.⁴ Ping, H.⁵ Rong, Z.⁶

53
- 33847671286
- S. Ghosh, C. Rivera, J.L. Pau, E. Munoz, O. Brandt, H.T. Grahn, Appl. Phys. Lett. 90 (2007) 091110-3.
- (2007) Appl. Phys. Lett. , vol.90 , pp. 091110-091113
- Ghosh, S.¹ Rivera, C.² Pau, J.L.³ Munoz, E.⁴ Brandt, O.⁵ Grahn, H.T.⁶

54
- 0000835981
- D. Walker, E. Monroy, P. Kung, J. Wu, M. Hamilton, F.J. Sanchez, et al., Appl. Phys. Lett. 74 (1999) 762-764.
- (1999) Appl. Phys. Lett. , vol.74 , pp. 762-764
- Walker, D.¹ Monroy, E.² Kung, P.³ Wu, J.⁴ Hamilton, M.⁵ Sanchez, F.J.⁶

55
- 0032678021
- J. Carrano, T. Li, C. Eiting, R. Dupuis, J. Campbell, J. Electron. Mater. 28 (1999) 325-333.
- (1999) J. Electron. Mater. , vol.28 , pp. 325-333
- Carrano, J.¹ Li, T.² Eiting, C.³ Dupuis, R.⁴ Campbell, J.⁵

56
- 77954297252
- L. Rigutti, M. Tchernycheva, A.D.L. Bugallo, G. Jacopin, F.H. Julien, R. Songmuang, et al., Phys. Status Solidi A 207 (2010) 1323-1327.
- (2010) Phys. Status Solidi A , vol.207 , pp. 1323-1327
- Rigutti, L.¹ Tchernycheva, M.² Bugallo, A.D.L.³ Jacopin, G.⁴ Julien, F.H.⁵ Songmuang, R.⁶

57
- 34548379478
- IET
- H. Hung, S.J. Chang, Y.C. Lin, H. Kuan, R.M. Lin, M.S.M. AlGaN, Optoelectronics, IET 1 (2007) 147-149.
- (2007) M.S.M. AlGaN, Optoelectronics , vol.1 , pp. 147-149
- Hung, H.¹ Chang, S.J.² Lin, Y.C.³ Kuan, H.⁴ Lin, R.M.⁵

58
- 0033731569
- M. Razeghi, P. Sandvik, P. Kung, D. Walker, K. Mi, X. Zhang, et al., Mater. Sci. Eng.: B 74 (2000) 107-112.
- (2000) Mater. Sci. Eng.: B , vol.74 , pp. 107-112
- Razeghi, M.¹ Sandvik, P.² Kung, P.³ Walker, D.⁴ Mi, K.⁵ Zhang, X.⁶

59
- 84869176521
- Z.M. Zhao, R.L. Jiang, P. Chen, D.J. Xi, Z.Y. Luo, R. Zhang, et al., Appl. Phys. Lett. 77 (2000) 444-446.
- (2000) Appl. Phys. Lett. , vol.77 , pp. 444-446
- Zhao, Z.M.¹ Jiang, R.L.² Chen, P.³ Xi, D.J.⁴ Luo, Z.Y.⁵ Zhang, R.⁶

60
- 47849086553
- S.-H. Chang, Y.-K. Fang, K.-C. Hsu, T.-C. Wei, U.V. GaN, Sens. Actuators A: Phys. 147 (2008) 1-5.
- (2008) U.V. GaN, Sens. Actuators A: Phys. , vol.147 , pp. 1-5
- Chang, S.-H.¹ Fang, Y.-K.² Hsu, K.-C.³ Wei, T.-C.⁴

61
- 78651264651
- D. Li, X. Sun, H. Song, Z. Li, Y. Chen, G. Miao, et al., Appl. Phys. Lett. 98 (2011) 011108.
- (2011) Appl. Phys. Lett. , vol.98 , pp. 011108
- Li, D.¹ Sun, X.² Song, H.³ Li, Z.⁴ Chen, Y.⁵ Miao, G.⁶

62
- 0034274369
- H.Z. Xu, Z.G. Wang, M. Kawabe, I. Harrison, B.J. Ansell, C.T. Foxon, J. Cryst. Growth 218 (2000) 1-6.
- (2000) J. Cryst. Growth , vol.218 , pp. 1-6
- Xu, H.Z.¹ Wang, Z.G.² Kawabe, M.³ Harrison, I.⁴ Ansell, B.J.⁵ Foxon, C.T.⁶

63
- 33751398799
- N. Vanhove, J. John, A. Lorenz, K. Cheng, G. Borghs, Appl. Surf. Sci. 253 (2006) 2930-2932.
- (2006) Appl. Surf. Sci. , vol.253 , pp. 2930-2932
- Vanhove, N.¹ John, J.² Lorenz, A.³ Cheng, K.⁴ Borghs, G.⁵

64
- 33846448740
- M.-L. Tu, Y.-K. Su, S.-J. Chang, R.W. Chuang, U.V. GaN, J. Cryst. Growth 298 (2007) 744-747.
- (2007) U.V. GaN, J. Cryst. Growth , vol.298 , pp. 744-747
- Tu, M.-L.¹ Su, Y.-K.² Chang, S.-J.³ Chuang, R.W.⁴

65
- 19944426541
- Y.K. Su, P.C. Chang, C.H. Chen, S.J. Chang, C.L. Yu, C.T. Lee, et al., Solid-State Electron. 49 (2005) 459-463.
- (2005) Solid-State Electron. , vol.49 , pp. 459-463
- Su, Y.K.¹ Chang, P.C.² Chen, C.H.³ Chang, S.J.⁴ Yu, C.L.⁵ Lee, C.T.⁶

66
- 84889636065
- A.V. Babichev, H. Zhang, P. Lavenus, F.H. Julien, A.Y. Egorov, Y.T. Lin, et al., Appl. Phys. Lett. (2013) 103:.
- (2013) Appl. Phys. Lett. , pp. 103
- Babichev, A.V.¹ Zhang, H.² Lavenus, P.³ Julien, F.H.⁴ Egorov, A.Y.⁵ Lin, Y.T.⁶

67
- 0034207155
- T. Sawada, Y. Ito, K. Imai, K. Suzuki, H. Tomozawa, S. Sakai, Appl. Surf. Sci. 159-160 (2000) 449-455.
- (2000) Appl. Surf. Sci. , vol.159-160 , pp. 449-455
- Sawada, T.¹ Ito, Y.² Imai, K.³ Suzuki, K.⁴ Tomozawa, H.⁵ Sakai, S.⁶

68
- 32644438978
- Y.D. Jhou, C.H. Chen, S.J. Chang, Y.K. Su, P.C. Chang, P.C. Chen, et al., Microelectron. J. 37 (2006) 328-331.
- (2006) Microelectron. J. , vol.37 , pp. 328-331
- Jhou, Y.D.¹ Chen, C.H.² Chang, S.J.³ Su, Y.K.⁴ Chang, P.C.⁵ Chen, P.C.⁶

69
- 23444449504
- Y.C. Lee, Z. Hassan, M.J. Abdullah, M.R. Hashim, K. Ibrahim, Microelectron. Eng. 81 (2005) 262-267.
- (2005) Microelectron. Eng. , vol.81 , pp. 262-267
- Lee, Y.C.¹ Hassan, Z.² Abdullah, M.J.³ Hashim, M.R.⁴ Ibrahim, K.⁵

70
- 79951816809
- S. Averin, P. Kuznetsov, V. Zhitov, N. Alkeev, V. Kotov, A. Dorofeev, et al., Tech. Phys. 56 (2011) 295-297.
- (2011) Tech. Phys. , vol.56 , pp. 295-297
- Averin, S.¹ Kuznetsov, P.² Zhitov, V.³ Alkeev, N.⁴ Kotov, V.⁵ Dorofeev, A.⁶

71
- 65949101258
- S.-P. Chang, S.-J. Chang, C.-Y. Lu, Y.-Z. Chiou, R.W. Chuang, H.-C. Lin, J. Cryst. Growth 311 (2009) 3003-3006.
- (2009) J. Cryst. Growth , vol.311 , pp. 3003-3006
- Chang, S.-P.¹ Chang, S.-J.² Lu, C.-Y.³ Chiou, Y.-Z.⁴ Chuang, R.W.⁵ Lin, H.-C.⁶

72
- 53349146191
- R.-Y. Yang, C.-M. Hsiung, H.-H. Chen, H.-W. Wu, M.-C. Shih, Microw. Opt. Technol. Lett. 50 (2008) 2863-2866.
- (2008) Microw. Opt. Technol. Lett. , vol.50 , pp. 2863-2866
- Yang, R.-Y.¹ Hsiung, C.-M.² Chen, H.-H.³ Wu, H.-W.⁴ Shih, M.-C.⁵

73
- 34547274389
- 263505-3
- R. Dahal, T.M. Al Tahtamouni, Z.Y. Fan, J.Y. Lin, H.X. Jiang, Appl. Phys. Lett. 90 (2007). (263505-3).
- (2007) Appl. Phys. Lett. , vol.90
- Dahal, R.¹ Al Tahtamouni, T.M.² Fan, Z.Y.³ Lin, J.Y.⁴ Jiang, H.X.⁵

74
- 38949170178
- A. Soltani, H.A. Barkad, M. Mattalah, B. Benbakhti, J.C. De Jaeger, Y. M. Chong, et al., Appl. Phys. Lett. 92 (2008) 053501-3.
- (2008) Appl. Phys. Lett. , vol.92 , pp. 053501-053503
- Soltani, A.¹ Barkad, H.A.² Mattalah, M.³ Benbakhti, B.⁴ De Jaeger, J.C.⁵ Chong, Y.M.⁶

75
- 41549090175
- S.V. Averine, P.I. Kuznetzov, V.A. Zhitov, N.V. Alkeev, Solid-State Electron. 52 (2008) 618-624.
- (2008) Solid-State Electron. , vol.52 , pp. 618-624
- Averine, S.V.¹ Kuznetzov, P.I.² Zhitov, V.A.³ Alkeev, N.V.⁴

76
- 0030575014
- D. Walker, X. Zhang, P. Kung, A. Saxler, S. Javadpour, J. Xu, et al., Appl. Phys. Lett. 68 (1996) 2100-2101.
- (1996) Appl. Phys. Lett. , vol.68 , pp. 2100-2101
- Walker, D.¹ Zhang, X.² Kung, P.³ Saxler, A.⁴ Javadpour, S.⁵ Xu, J.⁶

77
- 1942489139
- K. Kishino, M. Yonemaru, A. Kikuchi, Y. Toyoura, Phys. Status Solidi A 188 (2001) 321-324.
- (2001) Phys. Status Solidi A , vol.188 , pp. 321-324
- Kishino, K.¹ Yonemaru, M.² Kikuchi, A.³ Toyoura, Y.⁴

78
- 33749473676
- 143503-3
- M. Gokkavas, S. Butun, H. Yu, T. Tut, B. Butun, E. Ozbay, Appl. Phys. Lett. 89 (2006). (143503-3).
- (2006) Appl. Phys. Lett. , vol.89
- Gokkavas, M.¹ Butun, S.² Yu, H.³ Tut, T.⁴ Butun, B.⁵ Ozbay, E.⁶

79
- 34748862629
- M. Gökkavas, S. Butun, T. Tut, N. Biyikli, E. Ozbay, Photonics Nanostructures - Fundam. Appl. 5 (2007) 53-62.
- (2007) Photonics Nanostructures - Fundam. Appl. , vol.5 , pp. 53-62
- Gökkavas, M.¹ Butun, S.² Tut, T.³ Biyikli, N.⁴ Ozbay, E.⁵

80
- 72649083150
- J. Li, M. Zhao, X.F. Wang, Phys. B: Condens. Matter 405 (2010) 996-998.
- (2010) Phys. B: Condens. Matter , vol.405 , pp. 996-998
- Li, J.¹ Zhao, M.² Wang, X.F.³

81
- 0037911657
- A. Teke, S. Dogan, F. Yun, M.A. Reshchikov, H. Le, X.Q. Liu, et al., Solid-State Electron. 47 (2003) 1401-1408.
- (2003) Solid-State Electron. , vol.47 , pp. 1401-1408
- Teke, A.¹ Dogan, S.² Yun, F.³ Reshchikov, M.A.⁴ Le, H.⁵ Liu, X.Q.⁶

82
- 24144468949
- Y.D. Jhou, C.H. Chen, R.W. Chuang, S.J. Chang, Y.K. Su, P.C. Chang, et al., Solid-State Electron. 49 (2005) 1347-1351.
- (2005) Solid-State Electron. , vol.49 , pp. 1347-1351
- Jhou, Y.D.¹ Chen, C.H.² Chuang, R.W.³ Chang, S.J.⁴ Su, Y.K.⁵ Chang, P.C.⁶

83
- 57849148498
- A. Asgari, E. Ahmadi, M. Kalafi, Microelectron. J. 40 (2009) 104-107.
- (2009) Microelectron. J. , vol.40 , pp. 104-107
- Asgari, A.¹ Ahmadi, E.² Kalafi, M.³

84
- 0031120768
- Q. Chen, J.W. Yang, A. Osinsky, S. Gangopadhyay, B. Lim, M. Z. Anwar, et al., Appl. Phys. Lett. 70 (1997) 2277-2279.
- (1997) Appl. Phys. Lett. , vol.70 , pp. 2277-2279
- Chen, Q.¹ Yang, J.W.² Osinsky, A.³ Gangopadhyay, S.⁴ Lim, B.⁵ Anwar, M.Z.⁶

85
- 0011803705
- A. Bouhdada, M. Hanzaz, P. Gibart, F. Omnes, E. Monroy, E. Munoz, J. Appl. Phys. 87 (2000) 8286-8290.
- (2000) J. Appl. Phys. , vol.87 , pp. 8286-8290
- Bouhdada, A.¹ Hanzaz, M.² Gibart, P.³ Omnes, F.⁴ Monroy, E.⁵ Munoz, E.⁶

86
- 77949673500
- W.-C. Lai, L.-C. Peng, C.-C. Chen, J.-K. Sheu, S.-C. Shei, Appl. Phys. Lett. 96 (2010) 102104.
- (2010) Appl. Phys. Lett. , vol.96 , pp. 102104
- Lai, W.-C.¹ Peng, L.-C.² Chen, C.-C.³ Sheu, J.-K.⁴ Shei, S.-C.⁵

87
- 79954533031
- 141104-3
- P.E. Malinowski, J.-Y. Duboz, P. De Moor, K. Minoglou, J. John, S. M. Horcajo, et al., Appl. Phys. Lett. 98 (2011). (141104-3).
- (2011) Appl. Phys. Lett. , vol.98
- Malinowski, P.E.¹ Duboz, J.-Y.² De Moor, P.³ Minoglou, K.⁴ John, J.⁵ Horcajo, S.M.⁶

88
- 84915785098
- H. Jiang, T. Egawa, H. Ishikawa, C. Shao, T. Jimbo, Jpn. J. Appl. Phys. (2011) 43.
- (2011) Jpn. J. Appl. Phys. , pp. 43
- Jiang, H.¹ Egawa, T.² Ishikawa, H.³ Shao, C.⁴ Jimbo, T.⁵

89
- 19144367373
- S.-S. Liu, P.-W. Li, W.H. Lan, W.-j. Lin, Mater. Sci. Eng.: B 121 (2005) 86-91.
- (2005) Mater. Sci. Eng.: B , vol.121 , pp. 86-91
- Liu, S.-S.¹ Li, P.-W.² Lan, W.H.³ Lin, W.-J.⁴

90
- 7544237619
- E. Ozbay, N. Biyikli, I. Kimukin, T. Kartaloglu, T. Tut, O. Aytur, Sel. Top. IEEE J. Quantum Electron. 10 (2004) 742-751.
- (2004) Sel. Top. IEEE J. Quantum Electron. , vol.10 , pp. 742-751
- Ozbay, E.¹ Biyikli, N.² Kimukin, I.³ Kartaloglu, T.⁴ Tut, T.⁵ Aytur, O.⁶

91
- 34748908101
- T. Tut, B. Butun, M. Gokkavas, E. Ozbay, Photonics Nanostructures - Fundam. Appl. 5 (2007) 140-144.
- (2007) Photonics Nanostructures - Fundam. Appl. , vol.5 , pp. 140-144
- Tut, T.¹ Butun, B.² Gokkavas, M.³ Ozbay, E.⁴

92
- 84874092941
- Aluminum gallium nitride/silicon carbide separate absorption and multiplication avalanche photodiodes
- L.E. Rodak, A.V. Sampath, C.S. Gallinat, R.W. Enck, J. Smith, H. Shen, et al., Aluminum gallium nitride/silicon carbide separate absorption and multiplication avalanche photodiodes, in: Proceedings of the Lester Eastman Conference on High Performance Devices (LEC), 2012, pp. 1-4.
- Proceedings of the Lester Eastman Conference on High Performance Devices (LEC), 2012 , pp. 1-4
- Rodak, L.E.¹ Sampath, A.V.² Gallinat, C.S.³ Enck, R.W.⁴ Smith, J.⁵ Shen, H.⁶

93
- 84889772590
- E. Cicek, R. McClintock, C.Y. Cho, B. Rahnema, M. Razeghi, Appl. Phys. Lett. 103 (2013) 191108.
- (2013) Appl. Phys. Lett. , vol.103 , pp. 191108
- Cicek, E.¹ McClintock, R.² Cho, C.Y.³ Rahnema, B.⁴ Razeghi, M.⁵

94
- 84889653023
- 181113-4
- E. Cicek, R. McClintock, C.Y. Cho, B. Rahnema, M. Razeghi, Appl. Phys. Lett. 103 (2013). (181113-4).
- (2013) Appl. Phys. Lett. , vol.103
- Cicek, E.¹ McClintock, R.² Cho, C.Y.³ Rahnema, B.⁴ Razeghi, M.⁵

95
- 6344282385
- D.-W. Kim, K.-S. Chea, Y.-J. Park, I.-H. Lee, C.-R. Lee, Phys. Status Solidi A 201 (2004) 2686-2690.
- (2004) Phys. Status Solidi A , vol.201 , pp. 2686-2690
- Kim, D.-W.¹ Chea, K.-S.² Park, Y.-J.³ Lee, I.-H.⁴ Lee, C.-R.⁵

96
- 29744437715
- K.Y. Park, B.J. Kwon, Y.-H. Cho, S.A. Lee, J.H. Son, J. Appl. Phys. 98 (2005) 124505.
- (2005) J. Appl. Phys. , vol.98 , pp. 124505
- Park, K.Y.¹ Kwon, B.J.² Cho, Y.-H.³ Lee, S.A.⁴ Son, J.H.⁵

97
- 30944449649
- P.-C. Chang, C.-H. Chen, S.-J. Chang, Y.-K. Su, C.-L. Yu, B.-R. Huang, et al., Thin Solid Films 498 (2006) 133-136.
- (2006) Thin Solid Films , vol.498 , pp. 133-136
- Chang, P.-C.¹ Chen, C.-H.² Chang, S.-J.³ Su, Y.-K.⁴ Yu, C.-L.⁵ Huang, B.-R.⁶

98
- 33746332662
- K.Y. Park, B.J. Kwon, J.H. Son, Y.-H. Cho, Phys. Status Solidi C 3 (2006) 2299-2302.
- (2006) Phys. Status Solidi C , vol.3 , pp. 2299-2302
- Park, K.Y.¹ Kwon, B.J.² Son, J.H.³ Cho, Y.-H.⁴

99
- 0035451853
- 544-8
- J.L. Pau, E. Monroy, E. Muñoz, F.B. Naranjo, F. Calle, A. Sánchez-García, et al., J. Cryst. Growth 230 (2001). (544-8).
- (2001) J. Cryst. Growth , vol.230
- Pau, J.L.¹ Monroy, E.² Muñoz, E.³ Naranjo, F.B.⁴ Calle, F.⁵ Sánchez-García, A.⁶

100
- 34047132930
- S.J. Chang, T.K. Ko, J.K. Sheu, S.C. Shei, W.C. Lai, Y.Z. Chiou, et al., Sens. Actuators A: Phys. 135 (2007) 502-506.
- (2007) Sens. Actuators A: Phys. , vol.135 , pp. 502-506
- Chang, S.J.¹ Ko, T.K.² Sheu, J.K.³ Shei, S.C.⁴ Lai, W.C.⁵ Chiou, Y.Z.⁶

101
- 0043231405
- S.J. Chang, T.M. Kuan, C.H. Ko, Y.K. Su, J.B. Webb, J.A. Bardwell, et al., Solid-State Electron. 47 (2003) 2023-2026.
- (2003) Solid-State Electron. , vol.47 , pp. 2023-2026
- Chang, S.J.¹ Kuan, T.M.² Ko, C.H.³ Su, Y.K.⁴ Webb, J.B.⁵ Bardwell, J.A.⁶

102
- 27344448268
- V. Lebedev, I. Cimalla, V. Cimalla, R. Wagner, U. Kaiser, O. Ambacher, Phys. Status Solidi C 2 (2005) 1360-1365.
- (2005) Phys. Status Solidi C , vol.2 , pp. 1360-1365
- Lebedev, V.¹ Cimalla, I.² Cimalla, V.³ Wagner, R.⁴ Kaiser, U.⁵ Ambacher, O.⁶

103
- 32544432518
- C. Touzi, F. Omnès, T. Boufaden, P. Gibart, B. El Jani, Microelectron. J. 37 (2006) 336-339.
- (2006) Microelectron. J. , vol.37 , pp. 336-339
- Touzi, C.¹ Omnès, F.² Boufaden, T.³ Gibart, P.⁴ El Jani, B.⁵

104
- 5944240962
- D.Walker, X. Zhang, A. Saxler, P. Kung, J. Xu, M. Razeghi, Appl. Phys. Lett. 70 (1997) 949-951.
- (1997) Appl. Phys. Lett. , vol.70 , pp. 949-951
- Walker, D.¹ Zhang, X.² Saxler, A.³ Kung, P.⁴ Xu, J.⁵ Razeghi, M.⁶

105
- 77649188414
- H.C. Lee, Y.K. Su, J.C. Lin, Y.C. Cheng, T.C. Li, K.J. Chang, Solid-State Electron. 54 (2010) 488-491.
- (2010) Solid-State Electron. , vol.54 , pp. 488-491
- Lee, H.C.¹ Su, Y.K.² Lin, J.C.³ Cheng, Y.C.⁴ Li, T.C.⁵ Chang, K.J.⁶

106
- 0001695960
- T.N. Oder, J. Li, J.Y. Lin, H.X. Jiang, Appl. Phys. Lett. 77 (2000) 791-793.
- (2000) Appl. Phys. Lett. , vol.77 , pp. 791-793
- Oder, T.N.¹ Li, J.² Lin, J.Y.³ Jiang, H.X.⁴

107
- 84869163212
- Al 0.40 in 0.02 Ga 0.58 N based metal-semiconductor-metal photodiodes for ultraviolet detection
- W. Dongbo, J. Shujie, S. Sujuan, Z. Liancheng, Al 0.40 in 0.02 Ga 0.58 N based metal-semiconductor-metal photodiodes for ultraviolet detection, in: Proceedings of the International Conference on 2012 of Optoelectronics and Microelectronics (ICOM), 2012, pp. 412-416.
- Proceedings of the International Conference on 2012 of Optoelectronics and Microelectronics (ICOM), 2012 , pp. 412-416
- Dongbo, W.¹ Shujie, J.² Sujuan, S.³ Liancheng, Z.⁴

108
- 84877954111
- 191115-4
- W.-C. Lai, J.-T. Chen, Y.-Y. Yang, Appl. Phys. Lett. 102 (2013). (191115-4).
- (2013) Appl. Phys. Lett. , vol.102
- Lai, W.-C.¹ Chen, J.-T.² Yang, Y.-Y.³

109
- 36549014071
- J. Cheng, Y. Zhang, R. Guo, J. Cryst. Growth 310 (2008) 57-61.
- (2008) J. Cryst. Growth , vol.310 , pp. 57-61
- Cheng, J.¹ Zhang, Y.² Guo, R.³

110
- 34248547724
- H.K. Yadav, K. Sreenivas, V. Gupta, Appl. Phys. Lett. 90 (2007) 172113.
- (2007) Appl. Phys. Lett. , vol.90 , pp. 172113
- Yadav, H.K.¹ Sreenivas, K.² Gupta, V.³

111
- 34248547724
- 172113-3
- H.K. Yadav, K. Sreenivas, V. Gupta, Appl. Phys. Lett. 90 (2007). (172113-3).
- (2007) Appl. Phys. Lett. , vol.90
- Yadav, H.K.¹ Sreenivas, K.² Gupta, V.³

112
- 77749264649
- H.K. Yadav, K. Sreenivas, V. Gupta, J. Appl. Phys. 107 (2010) 044507.
- (2010) J. Appl. Phys. , vol.107 , pp. 044507
- Yadav, H.K.¹ Sreenivas, K.² Gupta, V.³

113
- 84915778724
- K. ul Hasan, O. Nur, M. Willander, Appl. Phys. Lett. (2012) 100.
- (2012) Appl. Phys. Lett. , pp. 100
- Ul Hasan, K.¹ Nur, O.² Willander, M.³

114
- 33845425435
- Z.-Q. Xu, H. Deng, J. Xie, Y. Li, X.-T. Zu, Appl. Surf. Sci. 253 (2006) 476-479.
- (2006) Appl. Surf. Sci. , vol.253 , pp. 476-479
- Xu, Z.-Q.¹ Deng, H.² Xie, J.³ Li, Y.⁴ Zu, X.-T.⁵

115
- 82755183279
- A.M. Nahhas, ELECTRICA 10 (2008) 1-7.
- (2008) Electrica , vol.10 , pp. 1-7
- Nahhas, A.M.¹

116
- 78650738726
- J.S. Liu, C.X. Shan, B.H. Li, Z.Z. Zhang, C.L. Yang, D.Z. Shen, et al., Appl. Phys. Lett. 97 (2010) 251102.
- (2010) Appl. Phys. Lett. , vol.97 , pp. 251102
- Liu, J.S.¹ Shan, C.X.² Li, B.H.³ Zhang, Z.Z.⁴ Yang, C.L.⁵ Shen, D.Z.⁶

117
- 34248595476
- K.W. Liu, J.G. Ma, J.Y. Zhang, Y.M. Lu, D.Y. Jiang, B.H. Li, et al., Solid-State Electron. 51 (2007) 757-761.
- (2007) Solid-State Electron. , vol.51 , pp. 757-761
- Liu, K.W.¹ Ma, J.G.² Zhang, J.Y.³ Lu, Y.M.⁴ Jiang, D.Y.⁵ Li, B.H.⁶

118
- 70350739103
- Fabrication and characterization of Ni/GaN Schottky junction erythemal UV detectors
- H.F. Lui, W.K. Fong, C. Surya, Fabrication and characterization of Ni/GaN Schottky junction erythemal UV detectors, in: Proceedings of the 2009 OptoElectronics and Communications Conference, OECC, 2009, pp. 1-2.
- Proceedings of the 2009 OptoElectronics and Communications Conference, OECC, 2009 , pp. 1-2
- Lui, H.F.¹ Fong, W.K.² Surya, C.³

119
- 33847762854
- J.M. Liu, Y.B. Xia, L.J. Wang, Q.F. Su, W.M. Shi, J. Cryst. Growth 300 (2007) 353-357.
- (2007) J. Cryst. Growth , vol.300 , pp. 353-357
- Liu, J.M.¹ Xia, Y.B.² Wang, L.J.³ Su, Q.F.⁴ Shi, W.M.⁵

120
- 0000189926
- F.D. Auret, S.A. Goodman, M. Hayes, M.J. Legodi, H.A. van Laarhoven, D.C. Look, Appl. Phys. Lett. 79 (2001) 3074-3076.
- (2001) Appl. Phys. Lett. , vol.79 , pp. 3074-3076
- Auret, F.D.¹ Goodman, S.A.² Hayes, M.³ Legodi, M.J.⁴ Van Laarhoven, H.A.⁵ Look, D.C.⁶

121
- 33751400609
- S.J. Young, L.W. Ji, T.H. Fang, S.J. Chang, Y.K. Su, X.L. Du, Acta Mater. 55 (2007) 329-333.
- (2007) Acta Mater. , vol.55 , pp. 329-333
- Young, S.J.¹ Ji, L.W.² Fang, T.H.³ Chang, S.J.⁴ Su, Y.K.⁵ Du, X.L.⁶

122
- 77955555612
- N.N. Jandow, F.K. Yam, S.M. Thahab, H. Abu Hassan, K. Ibrahim, Curr. Appl. Phys. 10 (2010) 1452-1455.
- (2010) Curr. Appl. Phys. , vol.10 , pp. 1452-1455
- Jandow, N.N.¹ Yam, F.K.² Thahab, S.M.³ Abu Hassan, H.⁴ Ibrahim, K.⁵

123
- 79955402290
- N.N. Jandowa, K.A. Ibrahim, H.A. Hassana, S.M. Thahab, O.S. Hamad, J. Electron Devices 7 (2010) 225-229.
- (2010) J. Electron Devices , vol.7 , pp. 225-229
- Jandowa, N.N.¹ Ibrahim, K.A.² Hassana, H.A.³ Thahab, S.M.⁴ Hamad, O.S.⁵

124
- 33751229285
- X.G. Zheng, Q.S. Li, J.P. Zhao, D. Chen, B. Zhao, Y.J. Yang, et al., Appl. Surf. Sci. 253 (2006) 2264-2267.
- (2006) Appl. Surf. Sci. , vol.253 , pp. 2264-2267
- Zheng, X.G.¹ Li, Q.S.² Zhao, J.P.³ Chen, D.⁴ Zhao, B.⁵ Yang, Y.J.⁶

125
- 33745950059
- S.J. Young, L.W. Ji, S.J. Chang, Y.K. Su, J. Cryst. Growth 293 (2006) 43-47.
- (2006) J. Cryst. Growth , vol.293 , pp. 43-47
- Young, S.J.¹ Ji, L.W.² Chang, S.J.³ Su, Y.K.⁴

126
- 41449116781
- D. Jiang, J. Zhang, Y. Lu, K. Liu, D. Zhao, Z. Zhang, et al., Solid-State Electron. 52 (2008) 679-682.
- (2008) Solid-State Electron. , vol.52 , pp. 679-682
- Jiang, D.¹ Zhang, J.² Lu, Y.³ Liu, K.⁴ Zhao, D.⁵ Zhang, Z.⁶

127
- 34047150059
- S.J. Young, L.W. Ji, S.J. Chang, S.H. Liang, K.T. Lam, T.H. Fang, et al., Sens. Actuators A: Phys. 135 (2007) 529-533.
- (2007) Sens. Actuators A: Phys. , vol.135 , pp. 529-533
- Young, S.J.¹ Ji, L.W.² Chang, S.J.³ Liang, S.H.⁴ Lam, K.T.⁵ Fang, T.H.⁶

128
- 79957453637
- Y.Z. Li, X.M. Li, X.D. Gao, J. Alloys Compd. 509 (2011) 7193-7197.
- (2011) J. Alloys Compd. , vol.509 , pp. 7193-7197
- Li, Y.Z.¹ Li, X.M.² Gao, X.D.³

129
- 33947581035
- H. Endo, M. Sugibuchi, K. Takahashi, S. Goto, S. Sugimura, K. Hane, et al., Appl. Phys. Lett. 90 (2007) 121906-3.
- (2007) Appl. Phys. Lett. , vol.90 , pp. 121906-121913
- Endo, H.¹ Sugibuchi, M.² Takahashi, K.³ Goto, S.⁴ Sugimura, S.⁵ Hane, K.⁶

130
- 34948903920
- 142113-142113
- M. Nakano, A. Tsukazaki, R.Y. Gunji, K. Ueno, A. Ohtomo, T. Fukumura, et al., Appl. Phys. Lett. 91 (2007). (142113-142113).
- (2007) Appl. Phys. Lett. , vol.91
- Nakano, M.¹ Tsukazaki, A.² Gunji, R.Y.³ Ueno, K.⁴ Ohtomo, A.⁵ Fukumura, T.⁶

131
- 52949096855
- M. Nakano, T. Makino, A. Tsukazaki, K. Ueno, A. Ohtomo, T. Fukumura, et al., Appl. Phys. Lett. 93 (2008) 123309-3.
- (2008) Appl. Phys. Lett. , vol.93 , pp. 123309-123313
- Nakano, M.¹ Makino, T.² Tsukazaki, A.³ Ueno, K.⁴ Ohtomo, A.⁵ Fukumura, T.⁶

132
- 78049245860
- S.J. Young, S.J. Chang, L.W. Ji, T.H. Meen, C.H. Hsiao, K.W. Liu, et al., Microelectron. Eng. 88 (2011) 113-116.
- (2011) Microelectron. Eng. , vol.88 , pp. 113-116
- Young, S.J.¹ Chang, S.J.² Ji, L.W.³ Meen, T.H.⁴ Hsiao, C.H.⁵ Liu, K.W.⁶

133
- 61849184087
- Z. Bi, X. Yang, J. Zhang, X. Bian, D. Wang, X. Zhang, et al., J. Electron. Mater. 38 (2009) 609-612.
- (2009) J. Electron. Mater. , vol.38 , pp. 609-612
- Bi, Z.¹ Yang, X.² Zhang, J.³ Bian, X.⁴ Wang, D.⁵ Zhang, X.⁶

134
- 84883523039
- B. Nie, J.-G. Hu, L.-B. Luo, C. Xie, L.-H. Zeng, P. Lv, et al., Small 9 (2013) 2872-2879.
- (2013) Small , vol.9 , pp. 2872-2879
- Nie, B.¹ Hu, J.-G.² Luo, L.-B.³ Xie, C.⁴ Zeng, L.-H.⁵ Lv, P.⁶

135
- 79958789839
- F. Sun, C.-X. Shan, S.-P. Wang, B.-H. Li, Z.-Z. Zhang, C.-L. Yang, et al., Mater. Chem. Phys. 129 (2011) 27-29.
- (2011) Mater. Chem. Phys. , vol.129 , pp. 27-29
- Sun, F.¹ Shan, C.-X.² Wang, S.-P.³ Li, B.-H.⁴ Zhang, Z.-Z.⁵ Yang, C.-L.⁶

136
- 34247578612
- K. Wang, Y. Vygranenko, A. Nathan, Thin Solid Films 515 (2007) 6981-6985.
- (2007) Thin Solid Films , vol.515 , pp. 6981-6985
- Wang, K.¹ Vygranenko, Y.² Nathan, A.³

137
- 84863273900
- J. Yu, C.-X. Shan, Q. Qiao, X.-H. Xie, S.-P. Wang, Z.-Z. Zhang, et al., Sensors 12 (2012) 1280-1287.
- (2012) Sensors , vol.12 , pp. 1280-1287
- Yu, J.¹ Shan, C.-X.² Qiao, Q.³ Xie, X.-H.⁴ Wang, S.-P.⁵ Zhang, Z.-Z.⁶

138
- 84880226159
- J. Yu, C.X. Shan, X.M. Huang, X.W. Zhang, S.P. Wang, D.Z. Shen, J. Phys. D: Appl. Phys. 46 (2013) 305105.
- (2013) J. Phys. D: Appl. Phys. , vol.46 , pp. 305105
- Yu, J.¹ Shan, C.X.² Huang, X.M.³ Zhang, X.W.⁴ Wang, S.P.⁵ Shen, D.Z.⁶

139
- 63049135481
- T.C. Zhang, Y. Guo, Z.X. Mei, C.Z. Gu, X.L. Du, Appl. Phys. Lett. 94 (2009) 113508.
- (2009) Appl. Phys. Lett. , vol.94 , pp. 113508
- Zhang, T.C.¹ Guo, Y.² Mei, Z.X.³ Gu, C.Z.⁴ Du, X.L.⁵

140
- 80051788901
- S.-Y. Tsai, M.-H. Hon, Y.-M. Lu, Solid-State Electron. 63 (2011) 37-41.
- (2011) Solid-State Electron. , vol.63 , pp. 37-41
- Tsai, S.-Y.¹ Hon, M.-H.² Lu, Y.-M.³

141
- 84874965297
- W. Sheng-Bo, H. Chih-Hung, C. Shoou-Jinn, Z.Y. Jiao, Y. Sheng-Joue, H. Shang-Chao, et al., IEEE Trans. Nanotechnol. 12 (2013) 263-269.
- (2013) IEEE Trans. Nanotechnol. , vol.12 , pp. 263-269
- Sheng-Bo, W.¹ Chih-Hung, H.² Shoou-Jinn, C.³ Jiao, Z.Y.⁴ Sheng-Joue, Y.⁵ Shang-Chao, H.⁶

142
- 84883489041
- W. Tian, T. Zhai, C. Zhang, S.-L. Li, X. Wang, F. Liu, et al., Adv. Mater. 25 (2013) 4625-4630.
- (2013) Adv. Mater. , vol.25 , pp. 4625-4630
- Tian, W.¹ Zhai, T.² Zhang, C.³ Li, S.-L.⁴ Wang, X.⁵ Liu, F.⁶

143
- 67649307106
- C.-H. Chen, S.-J. Chang, S.-P. Chang, M.-J. Li, I.C. Chen, T.-J. Hsueh, et al., Chem. Phys. Lett. 476 (2009) 69-72.
- (2009) Chem. Phys. Lett. , vol.476 , pp. 69-72
- Chen, C.-H.¹ Chang, S.-J.² Chang, S.-P.³ Li, M.-J.⁴ Chen, I.C.⁵ Hsueh, T.-J.⁶

144
- 84863387285
- H. Zhou, G. Fang, Y. Zhu, N. Liu, H. Wang, H. Huang, et al., Europhys. Lett. 97 (2012) 68001.
- (2012) Europhys. Lett. , vol.97 , pp. 68001
- Zhou, H.¹ Fang, G.² Zhu, Y.³ Liu, N.⁴ Wang, H.⁵ Huang, H.⁶

145
- 84915774336
- IEEE
- C. Chia-Hsun, L. Ching-Ting, Photonics Technol. Lett., IEEE 25 (2013) 348-351.
- (2013) Photonics Technol. Lett. , vol.25 , pp. 348-351
- Chia-Hsun, C.¹ Ching-Ting, L.²

146
- 78650445082
- C.-H. Chen, J.-T. Yan, C.-T. Lee, ECS Trans. 28 (2010) 27-32.
- (2010) ECS Trans. , vol.28 , pp. 27-32
- Chen, C.-H.¹ Yan, J.-T.² Lee, C.-T.³

147
- 84860335548
- L. Hu, J. Yan, M. Liao, H. Xiang, X. Gong, L. Zhang, et al., Adv. Mater. 24 (2012) 2305-2309.
- (2012) Adv. Mater. , vol.24 , pp. 2305-2309
- Hu, L.¹ Yan, J.² Liao, M.³ Xiang, H.⁴ Gong, X.⁵ Zhang, L.⁶

148
- 54949083005
- Z. Guo, D. Zhao, Y. Liu, D. Shen, J. Zhang, B. Li, Appl. Phys. Lett. 93 (2008) 163501-3.
- (2008) Appl. Phys. Lett. , vol.93 , pp. 163501-163503
- Guo, Z.¹ Zhao, D.² Liu, Y.³ Shen, D.⁴ Zhang, J.⁵ Li, B.⁶

149
- 60349129268
- H. Huang, G. Fang, X. Mo, L. Yuan, H. Zhou, M. Wang, et al., Appl. Phys. Lett. 94 (2009) 063512-3.
- (2009) Appl. Phys. Lett. , vol.94 , pp. 063512-063513
- Huang, H.¹ Fang, G.² Mo, X.³ Yuan, L.⁴ Zhou, H.⁵ Wang, M.⁶

150
- 84915770753
- Y. Xie, M. Madel, Y. Li, W. Jie, B. Neuschl, M. Feneberg, et al., J. Appl. Phys. (2012) 112.
- (2012) J. Appl. Phys. , pp. 112
- Xie, Y.¹ Madel, M.² Li, Y.³ Jie, W.⁴ Neuschl, B.⁵ Feneberg, M.⁶

151
- 84874784393
- Thickness effect of sputtered ZnO seed layer on the electrical properties of Li-doped ZnO nanorods and application on the UV photodetector
- C.Y. Kung, S.L. Young, M.C. Kao, H.Z. Chen, J.H. Lin, H.H. Lin, et al., Thickness effect of sputtered ZnO seed layer on the electrical properties of Li-doped ZnO nanorods and application on the UV photodetector, in: Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference (INEC), 2013, pp. 417-20.
- Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference (INEC), 2013 , pp. 417-420
- Kung, C.Y.¹ Young, S.L.² Kao, M.C.³ Chen, H.Z.⁴ Lin, J.H.⁵ Lin, H.H.⁶

152
- 45149121151
- Y.-Y. Lin, C.-W. Chen, W.-C. Yen, W.-F. Su, C.-H. Ku, J.-J. Wu, Appl. Phys. Lett. 92 (2008) 233301.
- (2008) Appl. Phys. Lett. , vol.92 , pp. 233301
- Lin, Y.-Y.¹ Chen, C.-W.² Yen, W.-C.³ Su, W.-F.⁴ Ku, C.-H.⁵ Wu, J.-J.⁶

153
- 84863274003
- Q. Tang, L. Lin, X. Zhao, K. Huang, J. Wu, Langmuir 28 (2012) 3972-3978.
- (2012) Langmuir , vol.28 , pp. 3972-3978
- Tang, Q.¹ Lin, L.² Zhao, X.³ Huang, K.⁴ Wu, J.⁵

154
- 84915819870
- L.i.H. Jei, C. Shoou Jin, W. Chih Hung, H. Ting Jen, IEEE Electron Device Lett. 34 (2013) 1023-1025.
- (2013) IEEE Electron Device Lett. , vol.34 , pp. 1023-1025
- Jei, L.I.H.¹ Shoou Jin, C.² Chih Hung, W.³ Ting Jen, H.⁴

155
- 84859429173
- I.C. Yao, T.-Y. Tseng, P. Lin, Sens. Actuators A: Phys. 178 (2012) 26-31.
- (2012) Sens. Actuators A: Phys. , vol.178 , pp. 26-31
- Yao, I.C.¹ Tseng, T.-Y.² Lin, P.³

156
- 78149470178
- H.Y. Yang, D.I. Son, T.W. Kim, J.M. Lee, W.I. Park, Org. Electron. 11 (2010) 1313-1317.
- (2010) Org. Electron. , vol.11 , pp. 1313-1317
- Yang, H.Y.¹ Son, D.I.² Kim, T.W.³ Lee, J.M.⁴ Park, W.I.⁵

157
- 77956061528
- W.W. Liu, B. Yao, B.H. Li, Y.F. Li, J. Zheng, Z.Z. Zhang, et al., Solid State Sci. 12 (2010) 1567-1569.
- (2010) Solid State Sci. , vol.12 , pp. 1567-1569
- Liu, W.W.¹ Yao, B.² Li, B.H.³ Li, Y.F.⁴ Zheng, J.⁵ Zhang, Z.Z.⁶

158
- 84860744305
- Y. Zhu, H. Zhou, G. Fang, M. Li, Semicond. Sci. Technol. 27 (2012) 065003.
- (2012) Semicond. Sci. Technol. , vol.27 , pp. 065003
- Zhu, Y.¹ Zhou, H.² Fang, G.³ Li, M.⁴

159
- 84915785650
- D. Ick Son, H. Yeon Yang, T. Whan Kim, W. Il Park, Appl. Phys. Lett. (2013) 102.
- (2013) Appl. Phys. Lett. , pp. 102
- Ick Son, D.¹ Yeon Yang, H.² Whan Kim, T.³ Il Park, W.⁴

160
- 27744604400
- X.-W. Fu, Z.-M. Liao, Y.-B. Zhou, H.-C.Wu, Y.-Q. Bie, J. Xu, et al., Appl. Phys. Lett. (2012) 100.
- (2012) Appl. Phys. Lett. , pp. 100
- Fu, X.-W.¹ Liao, Z.-M.² Zhou, Y.-B.³ Wu, H.-C.⁴ Bie, Y.-Q.⁵ Xu, J.⁶

161
- 84883144551
- S. Dali, Y. Mingpeng, L. Jie, IEEE Electron Device Lett. 34 (2013) 1169-1171.
- (2013) IEEE Electron Device Lett. , vol.34 , pp. 1169-1171
- Dali, S.¹ Mingpeng, Y.² Jie, L.³

162
- 84878300088
- F. Zhang, S. Niu, W. Guo, G. Zhu, Y. Liu, X. Zhang, et al., ACS Nano 7 (2013) 4537-4544.
- (2013) ACS Nano , vol.7 , pp. 4537-4544
- Zhang, F.¹ Niu, S.² Guo, W.³ Zhu, G.⁴ Liu, Y.⁵ Zhang, X.⁶

163
- 77956208895
- G.M. Ali, P. Chakrabarti, Appl. Phys. Lett. 97 (2010) 031116-3.
- (2010) Appl. Phys. Lett. , vol.97 , pp. 031116-031123
- Ali, G.M.¹ Chakrabarti, P.²

164
- 84878579496
- Z.-S. Hu, F.-Y. Hung, K.-J. Chen, S.-J. Chang, W.-K. Hsieh, T.-Y. Liao, et al., Appl. Surf. Sci. 279 (2013) 31-35.
- (2013) Appl. Surf. Sci. , vol.279 , pp. 31-35
- Hu, Z.-S.¹ Hung, F.-Y.² Chen, K.-J.³ Chang, S.-J.⁴ Hsieh, W.-K.⁵ Liao, T.-Y.⁶

165
- 78650674527
- Y. Yang, W. Guo, J. Qi, J. Zhao, Y. Zhang, Appl. Phys. Lett. 97 (2010) 223113.
- (2010) Appl. Phys. Lett. , vol.97 , pp. 223113
- Yang, Y.¹ Guo, W.² Qi, J.³ Zhao, J.⁴ Zhang, Y.⁵

166
- 34447557873
- L.J. Mandalapu, F.X. Xiu, Z. Yang, J.L. Liu, Solid-State Electron. 51 (2007) 1014-1017.
- (2007) Solid-State Electron. , vol.51 , pp. 1014-1017
- Mandalapu, L.J.¹ Xiu, F.X.² Yang, Z.³ Liu, J.L.⁴

167
- 77956610712
- J. Sun, F.-J. Liu, H.-Q. Huang, J.-W. Zhao, Z.-F. Hu, X.-Q. Zhang, et al., Appl. Surf. Sci. 257 (2010) 921-924.
- (2010) Appl. Surf. Sci. , vol.257 , pp. 921-924
- Sun, J.¹ Liu, F.-J.² Huang, H.-Q.³ Zhao, J.-W.⁴ Hu, Z.-F.⁵ Zhang, X.-Q.⁶

168
- 80051545523
- S.S. Shinde, K.Y. Rajpure, U.V. High-performance, Appl. Surf. Sci. 257 (2011) 9595-9599.
- (2011) U.V. High-performance, Appl. Surf. Sci. , vol.257 , pp. 9595-9599
- Shinde, S.S.¹ Rajpure, K.Y.²

169
- 78651362437
- Y. Wu, E. Girgis, V. Ström, W. Voit, L. Belova, K.V. Rao, Phys. Status Solidi A 208 (2011) 206-209.
- (2011) Phys. Status Solidi A , vol.208 , pp. 206-209
- Wu, Y.¹ Girgis, E.² Ström, V.³ Voit, W.⁴ Belova, L.⁵ Rao, K.V.⁶

170
- 79451469810
- J. Sun, Q. Dai, F. Liu, H. Huang, Z. Li, X. Zhang, et al., Sci. China Phys., Mech. Astron. 54 (2011) 102-105.
- (2011) Sci. China Phys., Mech. Astron. , vol.54 , pp. 102-105
- Sun, J.¹ Dai, Q.² Liu, F.³ Huang, H.⁴ Li, Z.⁵ Zhang, X.⁶

171
- 60649112294
- S. Kumar, G.-H. Kim, K. Sreenivas, R. Tandon, J. Electroceram. 22 (2009) 198-202.
- (2009) J. Electroceram. , vol.22 , pp. 198-202
- Kumar, S.¹ Kim, G.-H.² Sreenivas, K.³ Tandon, R.⁴

172
- 84915763190
- W.-S. Wang, C.-J. Tsai, C.-C. Ma, J. Appl. Phys. (2013) 114.
- (2013) J. Appl. Phys. , pp. 114
- Wang, W.-S.¹ Tsai, C.-J.² Ma, C.-C.³

173
- 78049352603
- Q. Yang, X. Guo, W. Wang, Y. Zhang, S. Xu, D.H. Lien, et al., ACS Nano 4 (2010) 6285-6291.
- (2010) ACS Nano , vol.4 , pp. 6285-6291
- Yang, Q.¹ Guo, X.² Wang, W.³ Zhang, Y.⁴ Xu, S.⁵ Lien, D.H.⁶

174
- 77953313672
- C. Soci, A. Zhang, X.-Y. Bao, H. Kim, Y. Lo, D. Wang, J. Nanosci. Nanotechnol. 10 (2010) 1430-1449.
- (2010) J. Nanosci. Nanotechnol. , vol.10 , pp. 1430-1449
- Soci, C.¹ Zhang, A.² Bao, X.-Y.³ Kim, H.⁴ Lo, Y.⁵ Wang, D.⁶

175
- 80051683269
- L. Vj, J. Oh, A.P. Nayak, A.M. Katzenmeyer, K.H. Gilchrist, S. Grego, et al., Sel. Top. IEEE J. Quantum Electron. 17 (2011) 1002-1032.
- (2011) Sel. Top. IEEE J. Quantum Electron. , vol.17 , pp. 1002-1032
- Vj, L.¹ Oh, J.² Nayak, A.P.³ Katzenmeyer, A.M.⁴ Gilchrist, K.H.⁵ Grego, S.⁶

176
- 70349973902
- W.Y. Weng, T.J. Hsueh, S.J. Chang, S.P. Chang, C.L. Hsu, Superlattices Microstruct. 46 (2009) 797-802.
- (2009) Superlattices Microstruct. , vol.46 , pp. 797-802
- Weng, W.Y.¹ Hsueh, T.J.² Chang, S.J.³ Chang, S.P.⁴ Hsu, C.L.⁵

177
- 84915794773
- C. Sheng-Po, L. Chien-Yuan, C. Shoou-Jinn, C. Yu-Zung, H. Ting-Jen, H. Cheng-Liang, Sel. Top. IEEE J. Quantum Electron. 17 (2011) 990-995.
- (2011) Sel. Top. IEEE J. Quantum Electron. , vol.17 , pp. 990-995
- Sheng-Po, C.¹ Chien-Yuan, L.² Shoou-Jinn, C.³ Yu-Zung, C.⁴ Ting-Jen, H.⁵ Cheng-Liang, H.⁶

178
- 84915785497
- S. Junya, N. Nobutaka, H. Shin-ichiro, U. Makoto, I. Kiminobu, H. Mitsuhiro, et al., Nanotechnology 17 (2006) 2567.
- (2006) Nanotechnology , vol.17 , pp. 2567
- Junya, S.¹ Nobutaka, N.² Shin-ichiro, H.³ Makoto, U.⁴ Kiminobu, I.⁵ Mitsuhiro, H.⁶

179
- 78649716398
- K. Liu, M. Sakurai, M. Liao, M. Aono, J. Phys. Chem. C 114 (2010) 19835-19839.
- (2010) J. Phys. Chem. C , vol.114 , pp. 19835-19839
- Liu, K.¹ Sakurai, M.² Liao, M.³ Aono, M.⁴

180
- 84857407243
- S.-K. Tzeng, M.-H. Hon, I.-C. Leu, J. Electrochem. Soc. 159 (2012) H440-H443.
- (2012) J. Electrochem. Soc. , vol.159 , pp. H440-H443
- Tzeng, S.-K.¹ Hon, M.-H.² Leu, I.-C.³

181
- 84915815296
- K.-P. Kim, D. Chang, S.K. Lim, S.-K. Lee, H.-K. Lyu, D.-K. Hwang, Jpn. J. Appl. Phys. 50 (2011) 1-3.
- (2011) Jpn. J. Appl. Phys. , vol.50 , pp. 1-3
- Kim, K.-P.¹ Chang, D.² Lim, S.K.³ Lee, S.-K.⁴ Lyu, H.-K.⁵ Hwang, D.-K.⁶

182
- 76449094855
- Y.H. Leung, Z.B. He, L.B. Luo, C.H.A. Tsang, N.B. Wong, W.J. Zhang, et al., Appl. Phys. Lett. 96 (2010) 053102.
- (2010) Appl. Phys. Lett. , vol.96 , pp. 053102
- Leung, Y.H.¹ He, Z.B.² Luo, L.B.³ Tsang, C.H.A.⁴ Wong, N.B.⁵ Zhang, W.J.⁶

183
- 84875953004
- S.-K. Tzeng, M.-H. Hon, I.-C. Leu, Mater. Chem. Phys. 139 (2013) 963-967.
- (2013) Mater. Chem. Phys. , vol.139 , pp. 963-967
- Tzeng, S.-K.¹ Hon, M.-H.² Leu, I.-C.³

184
- 84887590159
- C.-L. Hsu, H.-H. Li, T.-J. Hsueh, ACS Appl. Mater. Interfaces 5 (2013) 11142-11151.
- (2013) ACS Appl. Mater. Interfaces , vol.5 , pp. 11142-11151
- Hsu, C.-L.¹ Li, H.-H.² Hsueh, T.-J.³

185
- 65949101653
- L.W. Ji, S.M. Peng, Y.K. Su, S.J. Young, C.Z. Wu, W.B. Cheng, Appl. Phys. Lett. 94 (2009) 203106.
- (2009) Appl. Phys. Lett. , vol.94 , pp. 203106
- Ji, L.W.¹ Peng, S.M.² Su, Y.K.³ Young, S.J.⁴ Wu, C.Z.⁵ Cheng, W.B.⁶

186
- 79955618029
- H. Zhou, G.-J. Fang, N. Liu, X.-Z. Zhao, Mater. Sci. Eng.: B 176 (2011) 740-744.
- (2011) Mater. Sci. Eng.: B , vol.176 , pp. 740-744
- Zhou, H.¹ Fang, G.-J.² Liu, N.³ Zhao, X.-Z.⁴

187
- 34248140089
- C. Soci, A. Zhang, B. Xiang, S.A. Dayeh, D.P.R. Aplin, J. Park, et al., Nano Lett. 7 (2007) 1003-1009.
- (2007) Nano Lett. , vol.7 , pp. 1003-1009
- Soci, C.¹ Zhang, A.² Xiang, B.³ Dayeh, S.A.⁴ Aplin, D.P.R.⁵ Park, J.⁶

188
- 78149467577
- L. Wang, D. Zhao, Z. Su, F. Fang, B. Li, Z. Zhang, et al., Org. Electron. 11 (2010) 1318-1322.
- (2010) Org. Electron. , vol.11 , pp. 1318-1322
- Wang, L.¹ Zhao, D.² Su, Z.³ Fang, F.⁴ Li, B.⁵ Zhang, Z.⁶

189
- 55849114067
- O. Lupan, L. Chow, G. Chai, L. Chernyak, O. Lopatiuk-Tirpak, H. Heinrich, Phys. Status Solidi A 205 (2008) 2673-2678.
- (2008) Phys. Status Solidi A , vol.205 , pp. 2673-2678
- Lupan, O.¹ Chow, L.² Chai, G.³ Chernyak, L.⁴ Lopatiuk-Tirpak, O.⁵ Heinrich, H.⁶

190
- 84915824195
- J. Huisu, K. Ki Seok, K. Yong Hwan, J. Hyun, S. Hui, H.o.L. Kwang, et al., Nanotechnology 22 (2011) 275310.
- (2011) Nanotechnology , vol.22 , pp. 275310
- Huisu, J.¹ Ki Seok, K.² Yong Hwan, K.³ Hyun, J.⁴ Hui, S.⁵ Kwang, H.O.L.⁶

191
- 71149106067
- Y. Li, X. Dong, C. Cheng, X. Zhou, P. Zhang, J. Gao, et al., Phys. B: Condens. Matter 404 (2009) 4282-4285.
- (2009) Phys. B: Condens. Matter , vol.404 , pp. 4282-4285
- Li, Y.¹ Dong, X.² Cheng, C.³ Zhou, X.⁴ Zhang, P.⁵ Gao, J.⁶

192
- 84879081453
- S.M. Hatch, J. Briscoe, A. Sapelkin, W.P. Gillin, J.B. Gilchrist, M. P. Ryan, et al., J. Appl. Phys. 113 (2013) 204501-9.
- (2013) J. Appl. Phys. , vol.113 , pp. 204501-204509
- Hatch, S.M.¹ Briscoe, J.² Sapelkin, A.³ Gillin, W.P.⁴ Gilchrist, J.B.⁵ Ryan, M.P.⁶

193
- 67649669567
- J.H. Jun, H. Seong, K. Cho, B.-M. Moon, S. Kim, Ceram. Int. 35 (2009) 2797-2801.
- (2009) Ceram. Int. , vol.35 , pp. 2797-2801
- Jun, J.H.¹ Seong, H.² Cho, K.³ Moon, B.-M.⁴ Kim, S.⁵

194
- 84915778993
- H.I. Abdulgafour, Z. Hassan, N.M. Ahmed, F.K. Yam, J. Appl. Phys. (2012) 112:.
- (2012) J. Appl. Phys. , pp. 112
- Abdulgafour, H.I.¹ Hassan, Z.² Ahmed, N.M.³ Yam, F.K.⁴

195
- 77349112012
- Y. Wenjing, M. Norman, H. Horst, K. Ralph, Nanotechnology 21 (2010) 115501.
- (2010) Nanotechnology , vol.21 , pp. 115501
- Wenjing, Y.¹ Norman, M.² Horst, H.³ Ralph, K.⁴

196
- 78650572592
- L. Qin, C. Shing, S. Sawyer, P.S. Dutta, Opt. Mater. 33 (2011) 359-362.
- (2011) Opt. Mater. , vol.33 , pp. 359-362
- Qin, L.¹ Shing, C.² Sawyer, S.³ Dutta, P.S.⁴

197
- 79960688250
- S. Su, X. Yang, C. Hu, J. Semicond. 32 (2011) 074008.
- (2011) J. Semicond. , vol.32 , pp. 074008
- Su, S.¹ Yang, X.² Hu, C.³

198
- 0037069807
- P. Gao, Z.L. Wang, J. Phys. Chem. B 106 (2002) 12653-12658.
- (2002) J. Phys. Chem. B , vol.106 , pp. 12653-12658
- Gao, P.¹ Wang, Z.L.²

199
- 84884654905
- F. Yi, Q. Liao, Y. Huang, Y. Gu, Y. Zhang, Semicond. Sci. Technol. 28 (2013) 105023.
- (2013) Semicond. Sci. Technol. , vol.28 , pp. 105023
- Yi, F.¹ Liao, Q.² Huang, Y.³ Gu, Y.⁴ Zhang, Y.⁵

200
- 33746773875
- X.H. Xie, Z.Z. Zhang, C.X. Shan, H.Y. Chen, D.Z. Shen, Appl. Phys. Lett. (2012) 101:.
- (2012) Appl. Phys. Lett. , pp. 101
- Xie, X.H.¹ Zhang, Z.Z.² Shan, C.X.³ Chen, H.Y.⁴ Shen, D.Z.⁵

201
- 70349746999
- L.K. Wang, Z.G. Ju, C.X. Shan, J. Zheng, D.Z. Shen, B. Yao, et al., Solid State Commun. 149 (2009) 2021-2023.
- (2009) Solid State Commun. , vol.149 , pp. 2021-2023
- Wang, L.K.¹ Ju, Z.G.² Shan, C.X.³ Zheng, J.⁴ Shen, D.Z.⁵ Yao, B.⁶

202
- 78651233028
- C.Y. Zhao, X.H.Wang, J.Y. Zhang, Z.G. Ju, C.X. Shan, B. Yao, et al., Thin Solid Films 519 (2011) 1976-1979.
- (2011) Thin Solid Films , vol.519 , pp. 1976-1979
- Zhao, C.Y.¹ Wang, X.H.² Zhang, J.Y.³ Ju, Z.G.⁴ Shan, C.X.⁵ Yao, B.⁶

203
- 55149123999
- 173505-3
- Z.G. Ju, C.X. Shan, D.Y. Jiang, J.Y. Zhang, B. Yao, D.X. Zhao, et al., Appl. Phys. Lett. 93 (2008). (173505-3).
- (2008) Appl. Phys. Lett. , vol.93
- Ju, Z.G.¹ Shan, C.X.² Jiang, D.Y.³ Zhang, J.Y.⁴ Yao, B.⁵ Zhao, D.X.⁶

204
- 84862833263
- Y. Zhao, J. Zhang, D. Jiang, C. Shan, Z. Zhang, B. Yao, et al., ACS Appl. Mater. Interfaces 1 (2009) 2428-2430.
- (2009) ACS Appl. Mater. Interfaces , vol.1 , pp. 2428-2430
- Zhao, Y.¹ Zhang, J.² Jiang, D.³ Shan, C.⁴ Zhang, Z.⁵ Yao, B.⁶

205
- 77951132139
- H. Zhu, C.X. Shan, L.K. Wang, J. Zheng, J.Y. Zhang, B. Yao, et al., J. Phys. Chem. C 114 (2010) 7169-7172.
- (2010) J. Phys. Chem. C , vol.114 , pp. 7169-7172
- Zhu, H.¹ Shan, C.X.² Wang, L.K.³ Zheng, J.⁴ Zhang, J.Y.⁵ Yao, B.⁶

206
- 79960079744
- Y.N. Hou, Z.X. Mei, H.L. Liang, D.Q. Ye, S. Liang, C.Z. Gu, et al., Appl. Phys. Lett. 98 (2011) 263501-3.
- (2011) Appl. Phys. Lett. , vol.98 , pp. 263501-263503
- Hou, Y.N.¹ Mei, Z.X.² Liang, H.L.³ Ye, D.Q.⁴ Liang, S.⁵ Gu, C.Z.⁶

207
- 84915731682
- Z. Yanmin, Z. Jiying, J. Dayong, S. Chongxin, Z. Zhenzhong, Y. Bin, et al., J. Phys. D: Appl. Phys. 42 (2009) 092007.
- (2009) J. Phys. D: Appl. Phys. , vol.42 , pp. 092007
- Yanmin, Z.¹ Jiying, Z.² Dayong, J.³ Chongxin, S.⁴ Zhenzhong, Z.⁵ Bin, Y.⁶

208
- 79955598472
- D. Jiang, J. Qin, X. Zhang, Z. Bai, D. Shen, Mater. Sci. Eng.: B 176 (2011) 736-739.
- (2011) Mater. Sci. Eng.: B , vol.176 , pp. 736-739
- Jiang, D.¹ Qin, J.² Zhang, X.³ Bai, Z.⁴ Shen, D.⁵

209
- 84887064427
- Z. Zhang, H. von Wenckstern, M. Grundmann, Appl. Phys. Lett. 103 (2013) 171111-4.
- (2013) Appl. Phys. Lett. , vol.103 , pp. 171111-171114
- Zhang, Z.¹ Von Wenckstern, H.² Grundmann, M.³

210
- 0003650674
- Y.N. Hou, Z.X. Mei, H.L. Liang, D.Q. Ye, C.Z. Gu, X.L. Du, Appl. Phys. Lett. (2013) 102:.
- (2013) Appl. Phys. Lett. , pp. 102
- Hou, Y.N.¹ Mei, Z.X.² Liang, H.L.³ Ye, D.Q.⁴ Gu, C.Z.⁵ Du, X.L.⁶

211
- 84879005852
- J. Yu, C.X. Shan, J.S. Liu, X.W. Zhang, B.H. Li, D.Z. Shen, Phys. Status Solidi (RRL) - Rapid Res. Lett. 7 (2013) 425-428.
- (2013) Phys. Status Solidi (RRL) - Rapid Res. Lett. , vol.7 , pp. 425-428
- Yu, J.¹ Shan, C.X.² Liu, J.S.³ Zhang, X.W.⁴ Li, B.H.⁵ Shen, D.Z.⁶

212
- 84915773825
- S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, et al., Appl. Phys. Lett. (2011) 99:.
- (2011) Appl. Phys. Lett. , vol.99
- Han, S.¹ Zhang, Z.² Zhang, J.³ Wang, L.⁴ Zheng, J.⁵ Zhao, H.⁶

213
- 84879068588
- X.H. Xie, Z.Z. Zhang, B.H. Li, S.P. Wang, M.M. Jiang, C.X. Shan, et al., Appl. Phys. Lett. 102 (2013) 231122-4.
- (2013) Appl. Phys. Lett. , vol.102 , pp. 231122-231124
- Xie, X.H.¹ Zhang, Z.Z.² Li, B.H.³ Wang, S.P.⁴ Jiang, M.M.⁵ Shan, C.X.⁶

214
- 78650264456
- S. Han, J.Y. Zhang, Z.Z. Zhang, L.K.Wang, Y.M. Zhao, J. Zheng, et al., J. Phys. Chem. C 114 (2010) 21757-21761.
- (2010) J. Phys. Chem. C , vol.114 , pp. 21757-21761
- Han, S.¹ Zhang, J.Y.² Zhang, Z.Z.³ Wang, L.K.⁴ Zhao, Y.M.⁵ Zheng, J.⁶

215
- 79960240440
- C.-Z. Wu, L.-W. Ji, S.-M. Peng, Y.-L. Chen, S.-J. Young, Electrochem. Solid-State Lett. 14 (2011) J55-J57.
- (2011) Electrochem. Solid-State Lett. , vol.14 , pp. J55-J57
- Wu, C.-Z.¹ Ji, L.-W.² Peng, S.-M.³ Chen, Y.-L.⁴ Young, S.-J.⁵

216
- 84884682317
- H. Yaonan, M. Zengxia, L. Huili, Y. Daqian, G. Changzhi, D. Xiaolong, et al., IEEE Trans. Electron Devices 60 (2013) 3474-3477.
- (2013) IEEE Trans. Electron Devices , vol.60 , pp. 3474-3477
- Yaonan, H.¹ Zengxia, M.² Huili, L.³ Daqian, Y.⁴ Changzhi, G.⁵ Xiaolong, D.⁶

217
- 77953130768
- D.-Y. Jiang, X.-Y. Zhang, Q.-S. Liu, Z.-H. Bai, L.-P. Lu, X.-C. Wang, et al., Appl. Surf. Sci. 256 (2010) 6153-6156.
- (2010) Appl. Surf. Sci. , vol.256 , pp. 6153-6156
- Jiang, D.-Y.¹ Zhang, X.-Y.² Liu, Q.-S.³ Bai, Z.-H.⁴ Lu, L.-P.⁵ Wang, X.-C.⁶

218
- 79151471301
- S. Han, J. Zhang, Z. Zhang, Y. Zhao, L. Wang, J. Zheng, et al., ACS Appl. Mater. Interfaces 2 (2010) 1918-1921.
- (2010) ACS Appl. Mater. Interfaces , vol.2 , pp. 1918-1921
- Han, S.¹ Zhang, J.² Zhang, Z.³ Zhao, Y.⁴ Wang, L.⁵ Zheng, J.⁶

219
- 84880441799
- H.L. Liang, Z.X. Mei, Y.N. Hou, S. Liang, Z.L. Liu, Y.P. Liu, et al., J. Cryst. Growth 381 (2013) 6-9.
- (2013) J. Cryst. Growth , vol.381 , pp. 6-9
- Liang, H.L.¹ Mei, Z.X.² Hou, Y.N.³ Liang, S.⁴ Liu, Z.L.⁵ Liu, Y.P.⁶

220
- 61649127599
- D. Jiang, C. Shan, J. Zhang, Y. Lu, B. Yao, D. Zhao, et al., Cryst. Growth Des. 9 (2008) 454-456.
- (2008) Cryst. Growth Des. , vol.9 , pp. 454-456
- Jiang, D.¹ Shan, C.² Zhang, J.³ Lu, Y.⁴ Yao, B.⁵ Zhao, D.⁶

221
- 84887478391
- C. Li, Z. Zhang, H. Chen, X. Xie, D. Shen, Thin Solid Films 548 (2013) 456-459.
- (2013) Thin Solid Films , vol.548 , pp. 456-459
- Li, C.¹ Zhang, Z.² Chen, H.³ Xie, X.⁴ Shen, D.⁵

222
- 76449099071
- C. Yan, N. Singh, P.S. Lee, Appl. Phys. Lett. 96 (2010) 053108.
- (2010) Appl. Phys. Lett. , vol.96 , pp. 053108
- Yan, C.¹ Singh, N.² Lee, P.S.³

223
- 77958459391
- C. Li, Y. Bando, M. Liao, Y. Koide, D. Golberg, Appl. Phys. Lett. 97 (2010) 161102-3.
- (2010) Appl. Phys. Lett. , vol.97 , pp. 161102-161103
- Li, C.¹ Bando, Y.² Liao, M.³ Koide, Y.⁴ Golberg, D.⁵

224
- 10644281071
- Z. Ji, Z. He, K. Liu, S. Zhao, Z. He, J. Cryst. Growth 273 (2005) 446-450.
- (2005) J. Cryst. Growth , vol.273 , pp. 446-450
- Ji, Z.¹ He, Z.² Liu, K.³ Zhao, S.⁴ He, Z.⁵

225
- 77958463257
- J.W. Mares, R.C. Boutwell, M. Wei, A. Scheurer, W.V. Schoenfeld, Appl. Phys. Lett. 97 (2010) 161113-3.
- (2010) Appl. Phys. Lett. , vol.97 , pp. 161113-161113
- Mares, J.W.¹ Boutwell, R.C.² Wei, M.³ Scheurer, A.⁴ Schoenfeld, W.V.⁵

226
- 65449150092
- J.-M. Wu, C.-H. Kuo, Thin Solid Films 517 (2009) 3870-3873.
- (2009) Thin Solid Films , vol.517 , pp. 3870-3873
- Wu, J.-M.¹ Kuo, C.-H.²

227
- 79551662202
- Y. Xie, H. Huang, W. Yang, Z. Wu, J. Appl. Phys. 109 (2011) 023114.
- (2011) J. Appl. Phys. , vol.109 , pp. 023114
- Xie, Y.¹ Huang, H.² Yang, W.³ Wu, Z.⁴

228
- 74949129997
- W.J. Wang, C.X. Shan, H. Zhu, F.Y. Ma, D.Z. Shen, X.W. Fan, et al., J. Phys. D: Appl. Phys. 43 (2010) 045102.
- (2010) J. Phys. D: Appl. Phys. , vol.43 , pp. 045102
- Wang, W.J.¹ Shan, C.X.² Zhu, H.³ Ma, F.Y.⁴ Shen, D.Z.⁵ Fan, X.W.⁶

229
- 84887111201
- G. Zhang, J.-L. Sun, J. Wei, H. Sun, J.-L. Zhu, Nanotechnology 24 (2013) 465203.
- (2013) Nanotechnology , vol.24 , pp. 465203
- Zhang, G.¹ Sun, J.-L.² Wei, J.³ Sun, H.⁴ Zhu, J.-L.⁵

230
- 84890156972
- J. Shang, H. Qi, H. Feng, L. Wang, J. Zhang, Y. Wang, et al., Phys. Status Solidi (RRL) - Rapid Res. Lett. 7 (2013) 1071-1075.
- (2013) Phys. Status Solidi (RRL) - Rapid Res. Lett. , vol.7 , pp. 1071-1075
- Shang, J.¹ Qi, H.² Feng, H.³ Wang, L.⁴ Zhang, J.⁵ Wang, Y.⁶

231
- 84880813578
- M.-Z. Wang, F.-X. Liang, B. Nie, L.-H. Zeng, L.-X. Zheng, P. Lv, et al., Part. Part. Syst. Charact. 30 (2013) 630-636.
- (2013) Part. Part. Syst. Charact. , vol.30 , pp. 630-636
- Wang, M.-Z.¹ Liang, F.-X.² Nie, B.³ Zeng, L.-H.⁴ Zheng, L.-X.⁵ Lv, P.⁶

232
- 84879747416
- D. Shao, M. Yu, J. Lian, S. Sawyer, Nanotechnology 24 (2013) 295701.
- (2013) Nanotechnology , vol.24 , pp. 295701
- Shao, D.¹ Yu, M.² Lian, J.³ Sawyer, S.⁴

233
- 84890430584
- K. Khun, Z.H. Ibupoto, M. Willander, Phys. Status Solidi A 210 (2013) 2720-2724.
- (2013) Phys. Status Solidi A , vol.210 , pp. 2720-2724
- Khun, K.¹ Ibupoto, Z.H.² Willander, M.³

234
- 84875438505
- M. Zhang, X. Gu, K. Lv, W. Dong, S. Ruan, Y. Chen, et al., Appl. Surf. Sci. 268 (2013) 312-316.
- (2013) Appl. Surf. Sci. , vol.268 , pp. 312-316
- Zhang, M.¹ Gu, X.² Lv, K.³ Dong, W.⁴ Ruan, S.⁵ Chen, Y.⁶

235
- 84883300914
- K. Deng, H. Lu, Z. Shi, Q. Liu, L. Li, ACS Appl. Mater. Interfaces 5 (2013) 7845-7851.
- (2013) ACS Appl. Mater. Interfaces , vol.5 , pp. 7845-7851
- Deng, K.¹ Lu, H.² Shi, Z.³ Liu, Q.⁴ Li, L.⁵

236
- 0005319999
- S. Huang, K. Matsubara, J. Cheng, H. Li, W. Pan, Appl. Phys. Lett. (2013) 103:.
- (2013) Appl. Phys. Lett. , pp. 103
- Huang, S.¹ Matsubara, K.² Cheng, J.³ Li, H.⁴ Pan, W.⁵

237
- 0005319999
- C.-Y. Huang, R.-H. Horng, D.-S. Wuu, L.-W. Tu, H.-S. Kao, Appl. Phys. Lett. (2013) 102:.
- (2013) Appl. Phys. Lett. , pp. 102
- Huang, C.-Y.¹ Horng, R.-H.² Wuu, D.-S.³ Tu, L.-W.⁴ Kao, H.-S.⁵

238
- 84888398026
- R. Zou, Z. Zhang, J. Hu, L. Sang, Y. Koide, M. Liao, Nanotechnology 24 (2013) 495701.
- (2013) Nanotechnology , vol.24 , pp. 495701
- Zou, R.¹ Zhang, Z.² Hu, J.³ Sang, L.⁴ Koide, Y.⁵ Liao, M.⁶

239
- 84884984789
- H. Feng, W. Hao, C. Zhao, X. Xin, J. Cheng, Y. Cui, et al., Phys. Status Solidi A 210 (2013) 1861-1865.
- (2013) Phys. Status Solidi A , vol.210 , pp. 1861-1865
- Feng, H.¹ Hao, W.² Zhao, C.³ Xin, X.⁴ Cheng, J.⁵ Cui, Y.⁶

240
- 79953042528
- H. Huolin, X. Yannan, Y. Weifeng, Z. Feng, C. Jiafa, W. Zhengyun, IEEE Electron Device Lett. 32 (2011) 530-532.
- (2011) IEEE Electron Device Lett. , vol.32 , pp. 530-532
- Huolin, H.¹ Yannan, X.² Weifeng, Y.³ Feng, Z.⁴ Jiafa, C.⁵ Zhengyun, W.⁶

241
- 34249084373
- H. Xue, X. Kong, Z. Liu, C. Liu, J. Zhou, W. Chen, et al., Appl. Phys. Lett. 90 (2007) 201118.
- (2007) Appl. Phys. Lett. , vol.90 , pp. 201118
- Xue, H.¹ Kong, X.² Liu, Z.³ Liu, C.⁴ Zhou, J.⁵ Chen, W.⁶

242
- 84862298291
- IEEE
- J. Xing, Z. Changchun, G. Erjia, F. Yang, Sens. J., IEEE 12 (2012) 2561-2564.
- (2012) Sens. J. , vol.12 , pp. 2561-2564
- Xing, J.¹ Changchun, Z.² Erjia, G.³ Yang, F.⁴

243
- 84874658516
- Z. Min, C. Yu, Z. Haifeng, C. Weiyou, L. Kaibo, R. Shengping, IEEE Electron Device Lett. 34 (2013) 420-422.
- (2013) IEEE Electron Device Lett. , vol.34 , pp. 420-422
- Min, Z.¹ Yu, C.² Haifeng, Z.³ Weiyou, C.⁴ Kaibo, L.⁵ Shengping, R.⁶

244
- 84889608491
- Z. Min, L. Guohua, Z. Jingran, M. Xiaohui, L. Zhiqi, C. Weiyou, et al., IEEE Electron Device Lett. 34 (2013) 1539-1541.
- (2013) IEEE Electron Device Lett. , vol.34 , pp. 1539-1541
- Min, Z.¹ Guohua, L.² Jingran, Z.³ Xiaohui, M.⁴ Zhiqi, L.⁵ Weiyou, C.⁶

245
- 77955980805
- Y. Han, G. Wu, M. Wang, H. Chen, Polymer 51 (2010) 3736-3743.
- (2010) Polymer , vol.51 , pp. 3736-3743
- Han, Y.¹ Wu, G.² Wang, M.³ Chen, H.⁴

246
- 71049187196
- Y. Han, G. Wu, M. Wang, H. Chen, Appl. Surf. Sci. 256 (2009) 1530-1533.
- (2009) Appl. Surf. Sci. , vol.256 , pp. 1530-1533
- Han, Y.¹ Wu, G.² Wang, M.³ Chen, H.⁴

247
- 84878594394
- X. Li, C. Gao, H. Duan, B. Lu, Y. Wang, L. Chen, et al., Small 9 (2013) 2005-2011.
- (2013) Small , vol.9 , pp. 2005-2011
- Li, X.¹ Gao, C.² Duan, H.³ Lu, B.⁴ Wang, Y.⁵ Chen, L.⁶

248
- 27744604400
- T.D. Dao, C.T.T. Dang, G. Han, C.V. Hoang, W. Yi, V. Narayanamurti, et al., Appl. Phys. Lett. (2013) 103:-.
- (2013) Appl. Phys. Lett. , pp. 103
- Dao, T.D.¹ Dang, C.T.T.² Han, G.³ Hoang, C.V.⁴ Yi, W.⁵ Narayanamurti, V.⁶

249
- 80053895086
- Y. Han, C. Fan, G. Wu, H.-Z. Chen, M. Wang, J. Phys. Chem. C 115 (2011) 13438-13445.
- (2011) J. Phys. Chem. C , vol.115 , pp. 13438-13445
- Han, Y.¹ Fan, C.² Wu, G.³ Chen, H.-Z.⁴ Wang, M.⁵

250
- 78649825388
- L. Li, P.S. Lee, C. Yan, T. Zhai, X. Fang, M. Liao, et al., Adv. Mater. 22 (2010) 5145-5149.
- (2010) Adv. Mater. , vol.22 , pp. 5145-5149
- Li, L.¹ Lee, P.S.² Yan, C.³ Zhai, T.⁴ Fang, X.⁵ Liao, M.⁶

251
- 84867742768
- D. Shao, L. Qin, S. Sawyer, Appl. Surf. Sci. 261 (2012) 123-127.
- (2012) Appl. Surf. Sci. , vol.261 , pp. 123-127
- Shao, D.¹ Qin, L.² Sawyer, S.³

252
- 77953775826
- J. Zou, Q. Zhang, K. Huang, N. Marzari, J. Phys. Chem. C 114 (2010) 10725-10729.
- (2010) J. Phys. Chem. C , vol.114 , pp. 10725-10729
- Zou, J.¹ Zhang, Q.² Huang, K.³ Marzari, N.⁴

253
- 63749104458
- G. Zhang, W. Li, B. Chu, Z. Su, D. Yang, F. Yan, et al., Org. Electron. 10 (2009) 352-356.
- (2009) Org. Electron. , vol.10 , pp. 352-356
- Zhang, G.¹ Li, W.² Chu, B.³ Su, Z.⁴ Yang, D.⁵ Yan, F.⁶

254
- 11144347693
- F. Yang, M. Shtein, S.R. Forrest, Nat. Mater. 4 (2005) 37-41.
- (2005) Nat. Mater. , vol.4 , pp. 37-41
- Yang, F.¹ Shtein, M.² Forrest, S.R.³

255
- 51749088090
- Z. Su, W. Li, B. Chu, T. Li, J. Zhu, G. Zhang, et al., Appl. Phys. Lett. 93 (2008) 103309.
- (2008) Appl. Phys. Lett. , vol.93 , pp. 103309
- Su, Z.¹ Li, W.² Chu, B.³ Li, T.⁴ Zhu, J.⁵ Zhang, G.⁶

256
- 77949346923
- Li W-lWu S-h, B. Chu, C.S. Lee, Z.-s. Su, J.-b.Wang, et al., Appl. Phys. Lett. 96 (2010) 093302-3.
- (2010) Appl. Phys. Lett. , vol.96 , pp. 093302-093303
- Li, W.-L.¹ Wu, S.-H.² Chu, B.³ Lee, C.S.⁴ Su, Z.-S.⁵ Wang, J.-B.⁶

257
- 78049528067
- Z. Xu, C. Xu, Q. Wang, W. Jiang, C. Liu, L. Liu, et al., Synth. Met. 160 (2010) 2260-2264.
- (2010) Synth. Met. , vol.160 , pp. 2260-2264
- Xu, Z.¹ Xu, C.² Wang, Q.³ Jiang, W.⁴ Liu, C.⁵ Liu, L.⁶

258
- 73449108087
- F. Yan, H. Liu, W. Li, B. Chu, Z. Su, G. Zhang, et al., Appl. Phys. Lett. 95 (2009) 253308.
- (2009) Appl. Phys. Lett. , vol.95 , pp. 253308
- Yan, F.¹ Liu, H.² Li, W.³ Chu, B.⁴ Su, Z.⁵ Zhang, G.⁶

259
- 78149323458
- W.u.G. Li H-g, H.-Z. Chen, M. Wang, Org. Electron. 12 (2011) 70-77.
- (2011) Org. Electron. , vol.12 , pp. 70-77
- Wu, G.¹ Li, H.-G.² Chen, H.-Z.³ Wang, M.⁴

260
- 55649084799
- J.R. Cárdenas, E.A. de Vasconcelos, W.M. de Azevedo, E.F. da Silva, I. Pepe, A.F. da Silva, et al., Appl. Surf. Sci. 255 (2008) 688-690.
- (2008) Appl. Surf. Sci. , vol.255 , pp. 688-690
- Cárdenas, J.R.¹ De Vasconcelos, E.A.² De Azevedo, W.M.³ Da Silva, E.F.⁴ Pepe, I.⁵ Da Silva, A.F.⁶

261
- 77955418361
- W.u.G. Li H-g, M.-m. Shi, H.-Z. Chen, M. Wang, Synth. Met. 160 (2010) 1648-1653.
- (2010) Synth. Met. , vol.160 , pp. 1648-1653
- Wu, G.¹ Li, H.-G.² Shi, M.-M.³ Chen, H.-Z.⁴ Wang, M.⁵

262
- 84884640129
- Q. Wang, H. Aziz, Org. Electron. 14 (2013) 3030-3036.
- (2013) Org. Electron. , vol.14 , pp. 3030-3036
- Wang, Q.¹ Aziz, H.²

263
- 84865793317
- Y. Inagaki, M. Ebisu, M. Otsuki, N. Ayuni, T. Shimizu, T. Abe, et al., Phys. Status Solidi C 9 (2012) 1852-1855.
- (2012) Phys. Status Solidi C , vol.9 , pp. 1852-1855
- Inagaki, Y.¹ Ebisu, M.² Otsuki, M.³ Ayuni, N.⁴ Shimizu, T.⁵ Abe, T.⁶

264
- 84871217488
- L. Zhu, W.-S. Wang, Z.-G. Yao, X.-Q. Zhang, Y.-S. Wang, Solid-State Electron. 80 (2013) 14-18.
- (2013) Solid-State Electron. , vol.80 , pp. 14-18
- Zhu, L.¹ Wang, W.-S.² Yao, Z.-G.³ Zhang, X.-Q.⁴ Wang, Y.-S.⁵

265
- 77955143636
- Li W-l Wu S-h, B. Chu, C.S. Lee, Z.-s. Su, J.-b. Wang, et al., Appl. Phys. Lett. 97 (2010) 023306.
- (2010) Appl. Phys. Lett. , vol.97 , pp. 023306
- Li, W.-L.¹ Wu, S.-H.² Chu, B.³ Lee, C.S.⁴ Su, Z.-S.⁵ Wang, J.-B.⁶

266
- 77952813319
- Q. Dai, X.Q. Zhang, Opt. Exp. 18 (2010) 11821-11826.
- (2010) Opt. Exp. , vol.18 , pp. 11821-11826
- Dai, Q.¹ Zhang, X.Q.²

267
- 79951672046
- H.-G. Li, G. Wu, H.-Z. Chen, M. Wang, Curr. Appl. Phys. 11 (2011) 750-754.
- (2011) Curr. Appl. Phys. , vol.11 , pp. 750-754
- Li, H.-G.¹ Wu, G.² Chen, H.-Z.³ Wang, M.⁴

268
- 79958211286
- J. Sun, K. Peng, L. Zhu, Z. Hu, Q. Dai, X. Zhang, et al., Chin. Opt. Lett. 9 (2011) 052501.
- (2011) Chin. Opt. Lett. , vol.9 , pp. 052501
- Sun, J.¹ Peng, K.² Zhu, L.³ Hu, Z.⁴ Dai, Q.⁵ Zhang, X.⁶

269
- 0041705050
- M. Burkhardt, W. Liu, C.G. Shuttle, K. Banerjee, M.L. Chabinyc, Appl. Phys. Lett. (2012) 101:-.
- (2012) Appl. Phys. Lett. , pp. 101
- Burkhardt, M.¹ Liu, W.² Shuttle, C.G.³ Banerjee, K.⁴ Chabinyc, M.L.⁵

270
- 84862291635
- Highly efficient organic U.V. Photodetectors based on polyfluorene and naphthalenediimide blends: Effect of thermal annealing
- G. Memisoglu, C. Varlikli, Highly efficient organic U.V. photodetectors based on polyfluorene and naphthalenediimide blends: effect of thermal annealing, Int. J. Photoenergy 2012 (2012) 11.
- (2012) Int. J. Photoenergy , vol.2012 , pp. 11
- Memisoglu, G.¹ Varlikli, C.²

271
- 79951693980
- T. Ikenoue, N. Kameyama, S. Fujita, Phys. Status Solidi C 8 (2011) 613-615.
- (2011) Phys. Status Solidi C , vol.8 , pp. 613-615
- Ikenoue, T.¹ Kameyama, N.² Fujita, S.³

272
- 84881303172
- C.-B. Liu, M. Liu, G.-B. Che, B. Su, L. Wang, X.-X. Zhang, et al., Solid-State Electron. 89 (2013) 68-71.
- (2013) Solid-State Electron. , vol.89 , pp. 68-71
- Liu, C.-B.¹ Liu, M.² Che, G.-B.³ Su, B.⁴ Wang, L.⁵ Zhang, X.-X.⁶

273
- 80855123494
- C. Liu, L. Liu, G. Che, Y. Cui, Q. Wang, W. Li, et al., Solar Energy Mater. Solar Cells 96 (2012) 29-32.
- (2012) Solar Energy Mater. Solar Cells , vol.96 , pp. 29-32
- Liu, C.¹ Liu, L.² Che, G.³ Cui, Y.⁴ Wang, Q.⁵ Li, W.⁶

274
- 84870296963
- L. Zhu, W.S. Wang, Z.G. Yao, X.Q. Zhang, Y.S. Wang, IEEE Trans. Electron Devices 59 (2012) 3583-3586.
- (2012) IEEE Trans. Electron Devices , vol.59 , pp. 3583-3586
- Zhu, L.¹ Wang, W.S.² Yao, Z.G.³ Zhang, X.Q.⁴ Wang, Y.S.⁵

275
- 84874654587
- F. Guo, B. Yang, Y. Yuan, Z. Xiao, Q. Dong, Y. Bi, et al., Nat. Nano 7 (2012) 798-802.
- (2012) Nat. Nano , vol.7 , pp. 798-802
- Guo, F.¹ Yang, B.² Yuan, Y.³ Xiao, Z.⁴ Dong, Q.⁵ Bi, Y.⁶

276
- 32644444611
- J. Wei, Cryst. Res. Technol. 41 (2006) 186-191.
- (2006) Cryst. Res. Technol. , vol.41 , pp. 186-191
- Wei, J.¹

277
- 84915764448
- Detection of ultraviolet radiation using silicon carbide P-N junctions
- R.B. Campbell, C. Hung-Chi, Detection of ultraviolet radiation using silicon carbide P-N junctions, in: Proceedings of the International 1966 Electron Devices Meeting, 1966, pp. 26.
- Proceedings of the International 1966 Electron Devices Meeting, 1966 , pp. 26
- Campbell, R.B.¹ Hung-Chi, C.²

278
- 6144261628
- M. Razeghi, A. Rogalski, J. Appl. Phys. 79 (1996) 7433-7473.
- (1996) J. Appl. Phys. , vol.79 , pp. 7433-7473
- Razeghi, M.¹ Rogalski, A.²

279
- 30344469032
- X. Chen, W. Yang, Z. Wu, Microelectron. Eng. 83 (2006) 104-106.
- (2006) Microelectron. Eng. , vol.83 , pp. 104-106
- Chen, X.¹ Yang, W.² Wu, Z.³

280
- 34547585373
- X. Chen, H. Zhu, J. Cai, Z. Wu, J. Appl. Phys. 102 (2007) 024505-4.
- (2007) J. Appl. Phys. , vol.102 , pp. 024505-024514
- Chen, X.¹ Zhu, H.² Cai, J.³ Wu, Z.⁴

281
- 49549092020
- X.F. Liu, G.S. Sun, J.M. Li, J. Ning, Y.M. Zhao, M.C. Luo, et al., Phys. Status Solidi C 4 (2007) 1609-1612.
- (2007) Phys. Status Solidi C , vol.4 , pp. 1609-1612
- Liu, X.F.¹ Sun, G.S.² Li, J.M.³ Ning, J.⁴ Zhao, Y.M.⁵ Luo, M.C.⁶

282
- 60849099899
- W. Yang, F. Zhang, Z. Liu, Z. Wu, Mater. Sci. Semicond. Process. 11 (2008) 59-62.
- (2008) Mater. Sci. Semicond. Process. , vol.11 , pp. 59-62
- Yang, W.¹ Zhang, F.² Liu, Z.³ Wu, Z.⁴

283
- 80051579235
- B. Chen, Y. Yang, C. Chai, K. Song, Z. Ma, J. Semicond. 32 (2011) 084001.
- (2011) J. Semicond. , vol.32 , pp. 084001
- Chen, B.¹ Yang, Y.² Chai, C.³ Song, K.⁴ Ma, Z.⁵

284
- 79959460437
- B. Chen, Y.-T. Yang, C.-C. Chai, X.-J. Zhang, Chin. Phys. Lett. 28 (2011) 068501.
- (2011) Chin. Phys. Lett. , vol.28 , pp. 068501
- Chen, B.¹ Yang, Y.-T.² Chai, C.-C.³ Zhang, X.-J.⁴

285
- 46049084799
- F. Zhang, W. Yang, H. Huang, X. Chen, Z. Wu, H. Zhu, et al., Appl. Phys. Lett. 92 (2008) 251102.
- (2008) Appl. Phys. Lett. , vol.92 , pp. 251102
- Zhang, F.¹ Yang, W.² Huang, H.³ Chen, X.⁴ Wu, Z.⁵ Zhu, H.⁶

286
- 79955834161
- J.F. Felix, E.A. deVasconcelos, E.F. da Silva, W.M. de Azevedo, J. Phys. D: Appl. Phys. 44 (2011) 205101.
- (2011) J. Phys. D: Appl. Phys. , vol.44 , pp. 205101
- Felix, J.F.¹ DeVasconcelos, E.A.² Da Silva, E.F.³ De Azevedo, W.M.⁴

287
- 47649128856
- T.-H. Chou, Y.-K. Fang, Y.-T. Chiang, C.-I. Lin, C.-Y. Yang, Sens. Actuators A: Phys. 147 (2008) 60-63.
- (2008) Sens. Actuators A: Phys. , vol.147 , pp. 60-63
- Chou, T.-H.¹ Fang, Y.-K.² Chiang, Y.-T.³ Lin, C.-I.⁴ Yang, C.-Y.⁵

288
- 84870269236
- B. Chen, Y. Yang, X. Xie, N. Wang, Z. Ma, K. Song, et al., Chin. Sci. Bull. 57 (2012) 4427-4433.
- (2012) Chin. Sci. Bull. , vol.57 , pp. 4427-4433
- Chen, B.¹ Yang, Y.² Xie, X.³ Wang, N.⁴ Ma, Z.⁵ Song, K.⁶

289
- 15844402756
- J.-M. Choi, S. Im, Appl. Surf. Sci. 244 (2005) 435-438.
- (2005) Appl. Surf. Sci. , vol.244 , pp. 435-438
- Choi, J.-M.¹ Im, S.²

290
- 77149160026
- J.W. Levell, M.E. Giardini, Opt. Exp. 18 (2010) 3219-3225.
- (2010) Opt. Exp. , vol.18 , pp. 3219-3225
- Levell, J.W.¹ Giardini, M.E.²

291
- 78650498219
- L. Shi, F. Sarubbi, L.K. Nanver, U. Kroth, A. Gottwald, S. Nihtianov, Proc. Eng. 5 (2010) 633-636.
- (2010) Proc. Eng. , vol.5 , pp. 633-636
- Shi, L.¹ Sarubbi, F.² Nanver, L.K.³ Kroth, U.⁴ Gottwald, A.⁵ Nihtianov, S.⁶

292
- 33745910217
- W.F. Mohamad, A. Abou Hajar, A.N. Saleh, Renew. Energy 31 (2006) 1493-1503.
- (2006) Renew. Energy , vol.31 , pp. 1493-1503
- Mohamad, W.F.¹ Abou Hajar, A.² Saleh, A.N.³

293
- 0033358209
- S. Fineschi, B.E. Woodgate, R.A. Kimble (Eds.), SPIE, Denver, CO, USA
- J.F. Seely, R.S. Korde, F.A. Hanser, J. Wise, G.E. Holland, J.L. Weaver, et al., in: S. Fineschi, B.E. Woodgate, R.A. Kimble (Eds.), Characterization of Silicon Photodiode Detectors With Multilayer Filter Coatings for 17 to 150 A, 1st ed. SPIE, Denver, CO, USA, 1999, pp. 103-109.
- (1999) Characterization of Silicon Photodiode Detectors with Multilayer Filter Coatings for 17 to 150 A, 1st Ed. , pp. 103-109
- Seely, J.F.¹ Korde, R.S.² Hanser, F.A.³ Wise, J.⁴ Holland, G.E.⁵ Weaver, J.L.⁶

294
- 84873037080
- Electrical performance stability characterization of high-sensitivity Si-based EUV photodiodes in a harsh industrial application
- L. Shi, S.N. Nihtianov, F. Scholze, L.K. Nanver, Electrical performance stability characterization of high-sensitivity Si-based EUV photodiodes in a harsh industrial application, in: Proceedings of the 38th Annual Conference on 2012 IEEE Industrial Electronics Society, IECON, 2012, pp. 3952-3957.
- Proceedings of the 38th Annual Conference on 2012 IEEE Industrial Electronics Society, IECON, 2012 , pp. 3952-3957
- Shi, L.¹ Nihtianov, S.N.² Scholze, F.³ Nanver, L.K.⁴

295
- 84868622929
- P.N. Aruev, M.M. Barysheva, B.Y. Ber, N.V. Zabrodskaya, V.V. Zabrodskii, A.Y. Lopatin, et al., Quantum Electron. 42 (2012) 943.
- (2012) Quantum Electron. , vol.42 , pp. 943
- Aruev, P.N.¹ Barysheva, M.M.² Ber, B.Y.³ Zabrodskaya, N.V.⁴ Zabrodskii, V.V.⁵ Lopatin, A.Y.⁶

296
- 45049083255
- K. Yasuo, Appl. Surf. Sci. 254 (2008) 6268-6272.
- (2008) Appl. Surf. Sci. , vol.254 , pp. 6268-6272
- Yasuo, K.¹

297
- 21544480396
- S.C. Binari, M. Marchywka, D.A. Koolbeck, H.B. Dietrich, D. Moses, Diam. Rel. Mater. 2 (1993) 1020-1023.
- (1993) Diam. Rel. Mater. , vol.2 , pp. 1020-1023
- Binari, S.C.¹ Marchywka, M.² Koolbeck, D.A.³ Dietrich, H.B.⁴ Moses, D.⁵

298
- 2442499406
- T. Teraji, S. Yoshizaki, H. Wada, M. Hamada, T. Ito, Diam. Rel. Mater. 13 (2004) 858-862.
- (2004) Diam. Rel. Mater. , vol.13 , pp. 858-862
- Teraji, T.¹ Yoshizaki, S.² Wada, H.³ Hamada, M.⁴ Ito, T.⁵

299
- 84915773821
- A. Balducci, A. De Sio, M. Marinelli, E. Milani, M.E. Morgada, E. Pace, et al., Diam. Rel. Mater. 14 (1980-3).
- (1980) Diam. Rel. Mater. , vol.14
- Balducci, A.¹ De Sio, A.² Marinelli, M.³ Milani, E.⁴ Morgada, M.E.⁵ Pace, E.⁶

300
- 17044414556
- S.G. Wang, P.J. Sellin, A. Lohstroh, Q. Zhang, Appl. Phys. Lett. 86 (2005) 093503.
- (2005) Appl. Phys. Lett. , vol.86 , pp. 093503
- Wang, S.G.¹ Sellin, P.J.² Lohstroh, A.³ Zhang, Q.⁴

301
- 33748706998
- M. Liao, Y. Koide, Appl. Phys. Lett. 89 (2006) 113509-3.
- (2006) Appl. Phys. Lett. , vol.89 , pp. 113509-113513
- Liao, M.¹ Koide, Y.²

302
- 33846813841
- J.J. Yu, I.W. Boyd, Diam. Rel. Mater. 16 (2007) 494-497.
- (2007) Diam. Rel. Mater. , vol.16 , pp. 494-497
- Yu, J.J.¹ Boyd, I.W.²

303
- 84856268895
- M. Girolami, P. Allegrini, G. Conte, D.M. Trucchi, V.G. Ralchenko, S. Salvatori, IEEE Electron Device Lett. 33 (2012) 224-226.
- (2012) IEEE Electron Device Lett. , vol.33 , pp. 224-226
- Girolami, M.¹ Allegrini, P.² Conte, G.³ Trucchi, D.M.⁴ Ralchenko, V.G.⁵ Salvatori, S.⁶

304
- 33645134195
- K. Miki, T. Abe, J. Naruse, K. Ikumi, T. Yamaguchi, H. Kasada, et al., Physica Status Solidi B 243 (2006) 950-954.
- (2006) Physica Status Solidi B , vol.243 , pp. 950-954
- Miki, K.¹ Abe, T.² Naruse, J.³ Ikumi, K.⁴ Yamaguchi, T.⁵ Kasada, H.⁶

305
- 0035947977
- F. Vigue, E. Tournie, J.P. Faurie, E. Monroy, F. Calle, E. Munoz, Appl. Phys. Lett. 78 (2001) 4190-4192.
- (2001) Appl. Phys. Lett. , vol.78 , pp. 4190-4192
- Vigue, F.¹ Tournie, E.² Faurie, J.P.³ Monroy, E.⁴ Calle, F.⁵ Munoz, E.⁶

306
- 73949111961
- X. Fang, S. Xiong, T. Zhai, Y. Bando, M. Liao, U.K. Gautam, et al., Adv. Mater. 21 (2009) 5016-5021.
- (2009) Adv. Mater. , vol.21 , pp. 5016-5021
- Fang, X.¹ Xiong, S.² Zhai, T.³ Bando, Y.⁴ Liao, M.⁵ Gautam, U.K.⁶

307
- 84874045740
- B. Nie, L.-B. Luo, J.-J. Chen, J.-G. Hu, C.-Y. Wu, L. Wang, et al., Nanotechnology 24 (2013) 095603.
- (2013) Nanotechnology , vol.24 , pp. 095603
- Nie, B.¹ Luo, L.-B.² Chen, J.-J.³ Hu, J.-G.⁴ Wu, C.-Y.⁵ Wang, L.⁶

308
- 31144460213
- S.J. Chang, T.K. Lin, Y.K. Su, Y.Z. Chiou, C.K. Wang, S.P. Chang, et al., Mater. Sci. Eng.: B 127 (2006) 164-168.
- (2006) Mater. Sci. Eng.: B , vol.127 , pp. 164-168
- Chang, S.J.¹ Lin, T.K.² Su, Y.K.³ Chiou, Y.Z.⁴ Wang, C.K.⁵ Chang, S.P.⁶

309
- 84871739278
- Filterless vacuum ultraviolet photoconductive detector fabricated on NdF3 thin film
- M. Ieda, T. Ishimaru, S. Ono, Y. Yokota, T. Yanagida, A. Yoshikawa, Filterless vacuum ultraviolet photoconductive detector fabricated on NdF3 thin film, in: Proceedings of the IEEE 2012 Photonics Conference (IPC), 2012, pp. 382-383.
- Proceedings of the IEEE 2012 Photonics Conference (IPC), 2012 , pp. 382-383
- Ieda, M.¹ Ishimaru, T.² Ono, S.³ Yokota, Y.⁴ Yanagida, T.⁵ Yoshikawa, A.⁶

310
- 84915797063
- N. Horiuchi, Nat Photonics 6 (2012) 501.
- (2012) Nat Photonics , vol.6 , pp. 501
- Horiuchi, N.¹

311
- 76149083244
- X. Fang, Y. Bando, M. Liao, T. Zhai, U.K. Gautam, L. Li, et al., Adv. Funct. Mater. 20 (2010) 500-508.
- (2010) Adv. Funct. Mater. , vol.20 , pp. 500-508
- Fang, X.¹ Bando, Y.² Liao, M.³ Zhai, T.⁴ Gautam, U.K.⁵ Li, L.⁶

312
- 66249115339
- X. Fang, Y. Bando, M. Liao, U.K. Gautam, C. Zhi, B. Dierre, et al., Adv. Mater. 21 (2009) 2034-2039.
- (2009) Adv. Mater. , vol.21 , pp. 2034-2039
- Fang, X.¹ Bando, Y.² Liao, M.³ Gautam, U.K.⁴ Zhi, C.⁵ Dierre, B.⁶

313
- 84855966316
- Y.H. Lai, Q.L. He, W.Y. Cheung, S.K. Lok, K.S. Wong, S.K. Ho, et al., Appl. Phys. Lett. (2013) 102:.
- (2013) Appl. Phys. Lett. , pp. 102
- Lai, Y.H.¹ He, Q.L.² Cheung, W.Y.³ Lok, S.K.⁴ Wong, K.S.⁵ Ho, S.K.⁶

314
- 84885386555
- M. Muzafa Jumidali, M.R. Hashim, K. Al-Heuseen, Mater. Sci. Semicond. Process. 16 (2013) 1360-1364.
- (2013) Mater. Sci. Semicond. Process. , vol.16 , pp. 1360-1364
- Muzafa Jumidali, M.¹ Hashim, M.R.² Al-Heuseen, K.³

315
- 84887012758
- N.Y. Chan, M. Zhao, N. Wang, K. Au, J. Wang, L.W.H. Chan, et al., ACS Nano 7 (2013) 8673-8679.
- (2013) ACS Nano , vol.7 , pp. 8673-8679
- Chan, N.Y.¹ Zhao, M.² Wang, N.³ Au, K.⁴ Wang, J.⁵ Chan, L.W.H.⁶

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