Fabrication and characterization of Ni-based Schottky-type Al xGa1-xN ultraviolet photodetectors with different buffer conditions

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 2299-2302

  Park, Ki Yon ^a,b   Kwon, Bong Joon ^a   Son, Jeong Hwan ^b   Cho, Yong Hoon ^a  

^a Chungbuk National University   (South Korea)

^b Genicom Co Ltd   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL QUALITY; NI-BASED SCHOTTKY; OPTO-ELECTRICAL PROPERTIES; SPECIFIC DETECTIVITY; 73.40.KP; 78.55.CR; 81.15.KK; 85.60.DW; FABRICATION AND CHARACTERIZATIONS; SAPPHIRE SUBSTRATES; ULTRA-VIOLET PHOTODETECTORS;

ELECTRIC CURRENTS; EPITAXIAL GROWTH; GALLIUM NITRIDE; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCHOTTKY BARRIER DIODES; ULTRAVIOLET DETECTORS; ALUMINUM; ELECTRIC PROPERTIES; NICKEL; PHOTODETECTORS; PHOTONS; SAPPHIRE;

SEMICONDUCTING ALUMINUM COMPOUNDS; GALLIUM ALLOYS;

EID: 33746332662     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200565287     Document Type: Conference Paper

References (7)

1. E. Monroy, F. Calle, J. L. Pau, E. Munoz, F. Omnes, B. Beaumont, and P. Gibart, J. Cryst. Growth 230, 537 (2001).
2. V. Kuryatkov, A. Chandolu, B. Borisov, G. Kipshidze, K. Shu, S. Nikishin, and H. Temkin, Appl. Phys. Lett. 82, 1323 (2003).
3. C. J. Collins, U. Chowdhury, M. M. Wong, B. Yang, A. L. Beck, R. D. Dupuis, and J. C. Campbell, Appl. Phys. Lett. 80, 3754 (2002).
4. P. Sandvik, Kan Mi, F. Shahedipour, R. McClintock, A. Yasan, P. Kung, and M. Razeghi, J. Cryst. Growth 231, 366 (2001).
5. E. Monroy, F. Calle, J. L. Pau, E. Munoz, F. Omnes, B. Beaumont, and P. Gibart, phys. stat. sol. (a) 185, 91 (2001).
6. Dong-Wook Kim, Kyong-Seok Chea, Yong-Jo Park, In-Hwan Lee, and Cheul-Ro Lee, phys. stat. sol. (a) 201, 2686 (2004).
7. C. J. Collins, T. Li, D. J. H. Lambert, M. M. Wong, R. D. Dupuis, and J. C. Campbell, Appl. Phys. Lett. 77, 2810 (2000).