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Volumn 129, Issue 1-2, 2011, Pages 27-29

Ultraviolet photodetectors fabricated from ZnO p-i-n homojunction structures

Author keywords

Electronic characterization; Molecular beam epitaxy; Optical properties; Thin films

Indexed keywords

DECAY TIME; ELECTRONIC CHARACTERIZATION; HOMOJUNCTION; P-I-N STRUCTURE; RESPONSIVITY; REVERSE BIAS VOLTAGE; ULTRA-VIOLET; ULTRA-VIOLET LIGHT; ULTRA-VIOLET PHOTODETECTORS; UV PHOTODETECTORS; ZNO;

EID: 79958789839     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2011.04.058     Document Type: Article
Times cited : (43)

References (25)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.