Ultraviolet photodetector fabricated from metal-organic chemical vapor deposited MgZnO

Thin Solid Films

Volumn 519, Issue 6, 2011, Pages 1976-1979

  Zhao, C Y ^a,b,c   Wang, X H ^b   Zhang, J Y ^a   Ju, Z G ^a   Shan, C X ^a   Yao, B ^a   Zhao, D X ^a   Shen, D Z ^a   Fan, X W ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b CHANGCHUN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^c SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS   (China)

Author keywords

MgZnO; MOCVD; MSM; Photodetector

Indexed keywords

AS-GROWN FILMS; CHEMICAL VAPOR DEPOSITED; EXCITON ABSORPTIONS; FALL TIME; LOW-PRESSURE METAL-ORGANIC CHEMICAL VAPOR DEPOSITIONS; METAL SEMICONDUCTOR METAL; MGZNO; MOCVD; MSM; ORDERS OF MAGNITUDE; PEAK RESPONSIVITY; PHOTORESPONSES; REJECTION RATIOS; RISETIMES; ROOM TEMPERATURE; SAPPHIRE SUBSTRATES; ULTRA-VIOLET PHOTODETECTORS; WURTZITES;

DEPOSITION; INDUSTRIAL CHEMICALS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALS; ORGANIC CHEMICALS; PHOTODETECTORS; ZINC; ZINC SULFIDE;

OPTOELECTRONIC DEVICES;

EID: 78651233028     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.10.040     Document Type: Article

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