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Applied Physics Letters

Volumn 103, Issue 18, 2013, Pages

AlxGa1-xN-based solar-blind ultraviolet photodetector based on lateral epitaxial overgrowth of AlN on Si substrate

(5) Cicek, E a McClintock, R a Cho, C Y a Rahnema, B a Razeghi, M a

a Northwestern University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER EPITAXIAL GROWTH; ELECTRICAL CHARACTERISTIC; ELECTRICAL MEASUREMENT; EXTERNAL QUANTUM EFFICIENCY; LATERAL EPITAXIAL OVERGROWTH; PEAK DETECTION WAVELENGTH; THREE ORDERS OF MAGNITUDE; ULTRA-VIOLET PHOTODETECTORS;

EPITAXIAL GROWTH; GALLIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTODETECTORS; PHOTONS; SILICON; SUBSTRATES;

GALLIUM ALLOYS;

EID: 84889653023 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4828497 Document Type: Article

Times cited : (48)

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