Fabrication of transparent p-NiO/n-ZnO heterojunction devices for ultraviolet photodetectors

Solid-State Electronics

Volumn 63, Issue 1, 2011, Pages 37-41

  Tsai, Shu Yi ^a   Hon, Min Hsiung ^a   Lu, Yang Ming ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL UNIVERSITY OF TAINAN   (Taiwan)

Author keywords

Heterojunction; Photodiode; ZnO

Indexed keywords

CURRENT VOLTAGE CURVE; HALL EFFECT MEASUREMENT; HETEROJUNCTION DEVICES; P-N HETEROJUNCTIONS; PHOTOCURRENT MEASUREMENT; PREFERRED ORIENTATIONS; R.F. SPUTTERING; STRUCTURAL AND OPTICAL PROPERTIES; ULTRA-VIOLET PHOTODETECTORS; UV VISIBLE SPECTROSCOPY; VISIBLE REGION; XRD; ZNO; ZNO FILMS;

DISTILLATION; HALL EFFECT; METALLIC FILMS; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; ULTRAVIOLET SPECTROSCOPY; X RAY DIFFRACTION; ZINC OXIDE;

HETEROJUNCTIONS;

EID: 80051788901     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2011.04.019     Document Type: Article

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