Schottky barrier ultraviolet photodetectors on epitaxial lateral overgrown GaN

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 141-145

  Monroy, E ^a   Calle, F ^a   Munoz E ^a   Beaumont, B ^b   Omnes F ^b   Gibart, P ^b  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b CRHEA CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; LEAKAGE CURRENTS; NITRIDES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM COMPOUNDS;

GALLIUM NITRIDE;

ULTRAVIOLET DETECTORS;

EID: 0033221325     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<141::AID-PSSA141>3.0.CO;2-9     Document Type: Article

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