Lateral epitaxial overgrowth of GaN on sapphire and silicon substrates for ultraviolet photodetector applications

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 74, Issue 1, 2000, Pages 107-112

  Razeghi, M ^a   Sandvik, P ^a   Kung, P ^a   Walker, D ^a   Mi, K ^a   Zhang, X ^a   Kumar, V ^a   Diaz, J ^a   Shahedipour, F ^a  

^a Northwestern University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; PHOTODETECTORS; PHOTOLUMINESCENCE; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SUBSTRATES; THIN FILMS;

GALLIUM NITRIDE; LATERAL EPITAXIAL OVERGROWTH (LEO);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033731569     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00544-9     Document Type: Article

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