Growth of GaN films on silicon (1 1 1) by thermal vapor deposition method: Optical functions and MSM UV photodetector applications

Superlattices and Microstructures

Volumn 64, Issue , 2013, Pages 88-97

  Saron, K M A ^a   Hashim, M R ^a   Farrukh, M A ^b  

^a SCHOOL OF PHYSICS   (Malaysia)

^b GC UNIVERSITY   (Pakistan)

Author keywords

Detector; Gallium nitride (GaN); NH3 solution; Schottky diodes; Texture morphology; Vapor growth

Indexed keywords

GALLIUM NITRIDES (GAN); METAL SEMICONDUCTOR METAL; OPTICAL CHARACTERIZATION; PHOTOLUMINESCENCE SPECTRUM; SCANNING ELECTRON MICROSCOPY IMAGE; SCHOTTKY DIODES; THERMAL VAPOR DEPOSITIONS; VAPOR GROWTH;

DEPOSITION; DETECTORS; MORPHOLOGY; PHOTODETECTORS; PHOTOLUMINESCENCE; PHOTONS; SCANNING ELECTRON MICROSCOPY; SCHOTTKY BARRIER DIODES; SILICON; SILICON WAFERS; VAPORS; X RAY DIFFRACTION; ZINC SULFIDE;

GALLIUM NITRIDE;

EID: 84885142791     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2013.08.024     Document Type: Article

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