AlGaN ultraviolet photoconductors grown on sapphire

Applied Physics Letters

Volumn 68, Issue 15, 1996, Pages 2100-2101

  Walker, D ^a   Zhang, X ^a   Kung, P ^a   Saxler, A ^a   Javadpour, S ^a   Xu, J ^a   Razeghi, M ^a  

^a NORTHWESTERN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLITHOGRAPHY; QUANTUM EFFICIENCY; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SPECTROSCOPIC ANALYSIS;

ALUMINUM GALLIUM NITRIDE; CARRIER LIFETIME; CUTOFF WAVELENGTH; ELECTRON MOBILITY; SPECTRAL RESPONSIVITY; SWEEP OUT EFFECT; ULTRAVIOLET PHOTOCONDUCTORS;

PHOTOCONDUCTING DEVICES;

EID: 0030575014     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115597     Document Type: Article

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