Theoretical study of characteristics in GaN metal-semiconductor-metal photodetectors

Solid-State Electronics

Volumn 47, Issue 10, 2003, Pages 1863-1867

  Tian, Yuan ^a,c   Chua, Soo Jin ^a,b   Wang, Hong ^c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Dark current; GaN; MSM photodetector; Photocurrent and frequency response

Indexed keywords

CARRIER CONCENTRATION; FREQUENCY RESPONSE; GALLIUM NITRIDE; PHOTOCURRENTS;

DARK CURRENT;

PHOTODETECTORS;

EID: 0041591210     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00184-9     Document Type: Conference Paper

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