Nitride-based MSM UV photodetectors with photo-chemical annealing Schottky contacts

Solid-State Electronics

Volumn 49, Issue 3, 2005, Pages 459-463

  Su, Y K ^a   Chang, P C ^a   Chen, C H ^b   Chang, S J ^a   Yu, C L ^a   Lee, C T ^a   Lee, H Y ^a   Gong, J ^c   Chen, P C ^d   Wang, C H ^d  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHENG SHIU UNIVERSITY   (Taiwan)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^d NAN JEON INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

2DEG; GaN; MSM photodetector; Ni Au; Semi transparent contact

Indexed keywords

ANNEALING; DOPING (ADDITIVES); ELECTRODES; ELECTRON GAS; GALLIUM NITRIDE; QUANTUM EFFICIENCY; SPURIOUS SIGNAL NOISE; ULTRAVIOLET RADIATION;

METAL-SEMICONDUCTOR-METAL (MSM) PHOTODETECTORS; NI/AU; SEMI-TRANSPARENT CONTACTS; TWO-DIMENSIONAL ELECTRON GAS (2DEG);

PHOTODETECTORS;

EID: 19944426541     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.11.017     Document Type: Article

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