ZnO-based MIS photodetectors

Sensors and Actuators, A: Physical

Volumn 135, Issue 2, 2007, Pages 529-533

  Young, S J ^a   Ji, L W ^b   Chang, S J ^a   Liang, S H ^a   Lam, K T ^c   Fang, T H ^b   Chen, K J ^a   Du, X L ^d   Xue, Q K ^d  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL FORMOSA UNIVERSITY   (Taiwan)

^c LEADER UNIVERSITY   (Taiwan)

^d INSTITUTE OF PHYSICS   (China)

Author keywords

Photodiodes; Semiconducting II VI materials; ZnO

Indexed keywords

DARK CURRENTS; PHOTOCURRENTS; SEMICONDUCTOR DEVICES; ZINC OXIDE;

APPLIED BIAS; METAL INSULATOR SEMICONDUCTOR (MIS); METAL SEMICONDUCTOR METAL (MSM); VISIBLE REJECTION RATIOS;

ULTRAVIOLET DETECTORS;

EID: 34047150059     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2006.10.001     Document Type: Article

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