Influence of anneal atmosphere on ZnO-nanorod photoluminescent and morphological properties with self-powered photodetector performance

Journal of Applied Physics

Volumn 113, Issue 20, 2013, Pages

  Hatch, S M ^a   Briscoe, J ^a   Sapelkin, A ^a   Gillin, W P ^a   Gilchrist, J B ^b   Ryan, M P ^b   Heutz, S ^b   Dunn, S ^a  

^a QUEEN MARY UNIVERSITY OF LONDON   (United Kingdom)

^b IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; II-VI SEMICONDUCTORS; LIGHT; MORPHOLOGY; NANORODS; NITROGEN; OXIDE MINERALS; PHOTODETECTORS; PHOTONS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR QUANTUM WELLS; URANIUM METALLOGRAPHY; VANADIUM METALLOGRAPHY; ZINC OXIDE;

ANNEALING CONDITION; GREEN PHOTOLUMINESCENCE; MORPHOLOGICAL PROPERTIES; NITROGEN INCORPORATION; PHOTOCURRENT RESPONSE; SYNTHESIS PROCEDURE; TRANSMISSION ELECTRON; UV AND VISIBLE LIGHT;

ANNEALING;

EID: 84879081453     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4805349     Document Type: Article

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