Improved ultraviolet/visible rejection ratio using MgZnO/SiO 2 /n-Si heterojunction photodetectors

Applied Surface Science

Volumn 256, Issue 21, 2010, Pages 6153-6156

  Jiang, Da Yong ^a   Zhang, Xi Yan ^a   Liu, Quan Sheng ^a   Bai, Zhao Hui ^a   Lu, Li Ping ^a   Wang, Xiao Chun ^a   Mi, Xiao Yun ^a   Wang, Neng Li ^a   Shen, De Zhen ^b  

^a CHANGCHUN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b CHANGCHUN INSTITUTE OF OPTICS   (China)

Author keywords

Heterojunction; MgZnO; Photodetector; Ultraviolet visible rejection ratio

Indexed keywords

PHOTODETECTORS; PHOTONS; SILICA;

CURRENT VOLTAGE CURVE; FABRICATION AND CHARACTERIZATIONS; HETEROJUNCTION PHOTODETECTORS; MGZNO; ORDERS OF MAGNITUDE; RECTIFYING BEHAVIORS; REJECTION RATIOS; VISIBLE BLINDNESS;

HETEROJUNCTIONS;

EID: 77953130768     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.03.051     Document Type: Article

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