Ultraviolet photodetector based on a MgZnO film grown by radio-frequency magnetron sputtering

ACS Applied Materials and Interfaces

Volumn 1, Issue 11, 2009, Pages 2428-2430

  Zhao, Yanmin ^a,b   Zhang, Jiying ^a   Jiang, Dayong ^a   Shan, Chongxin ^a   Zhang, Zhenzhong ^a   Yao, Bin ^a   Zhao, Dongxu ^a   Shen, Dezhen ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

Mg0.47Zn0.53O; MSM; RF magnetron cosputtering; UV photodetector

Indexed keywords

CUTOFF WAVELENGTHS; FALL TIME; MAGNETRON CO-SPUTTERING; METAL SEMICONDUCTOR METAL; MG0.47ZN0.53O; MSM; ORDERS OF MAGNITUDE; PEAK RESPONSE; RADIO FREQUENCIES; RADIO-FREQUENCY-MAGNETRON SPUTTERING; REJECTION RATIOS; RF-MAGNETRON CO-SPUTTERING; RISETIMES; SCHOTTKY STRUCTURES; SHORT RESPONSE TIME; TRANSIENT RESPONSE; ULTRA-VIOLET; ULTRA-VIOLET PHOTODETECTORS; UV PHOTODETECTORS; UV-VISIBLE;

PHOTODETECTORS; ZINC;

OPTOELECTRONIC DEVICES;

EID: 84862833263     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am900531u     Document Type: Article

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