GaN membrane-supported UV photodetectors manufactured using nanolithographic processes

Microelectronics Journal

Volumn 40, Issue 2, 2009, Pages 319-321

  Muller A ^a   Konstantinidis, G ^b   Dragoman, M ^a   Neculoiu, D ^a   Dinescu, A ^a   Androulidaki, M ^b   Kayambaki, M ^b   Stavrinidis, A ^b   Vasilache, D ^a   Buiculescu, C ^a   Petrini, I ^a   Kostopoulos, A ^b   Dascalu, D ^a  

^a NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES   (Romania)

^b INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

Author keywords

GaN; Membrane; Nanolithography; Responsivity; SEM

Indexed keywords

GALLIUM NITRIDE; III-V SEMICONDUCTORS; MEMBRANES; NANOLITHOGRAPHY; PHOTODETECTORS; PHOTONS; SCANNING ELECTRON MICROSCOPY; WIDE BAND GAP SEMICONDUCTORS;

GAN MEMBRANES; GAN METAL-SEMICONDUCTOR-METAL; MSM STRUCTURES; NANOLITHOGRAPHIC TECHNIQUES; RESPONSIVITY; UV PHOTODETECTORS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 58749092007     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2008.07.021     Document Type: Article

References (9)

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