Annealing effects of Ti/Au contact on n-MgZnO/p-Si ultraviolet-B photodetectors

IEEE Transactions on Electron Devices

Volumn 60, Issue 10, 2013, Pages 3474-3477

  Hou, Yaonan ^a   Mei, Zengxia ^a   Liang, Huili ^a   Ye, Daqian ^a   Gu, Changzhi ^a   Du, Xiaolong ^a   Lu, Yicheng ^b  

^a INSTITUTE OF PHYSICS   (China)

^b RUTGERS UNIVERSITY   (United States)

Author keywords

Metal semiconductor contact; MgZnO; Persistent photocurrent (PPC); Ultraviolet photodetector

Indexed keywords

ANNEALING EFFECTS; METAL-SEMICONDUCTOR CONTACTS; MGZNO; P-N HETEROJUNCTIONS; PERSISTENT PHOTOCURRENTS; POST ANNEALING; THEORETICAL CALCULATIONS; ULTRA-VIOLET PHOTODETECTORS;

HETEROJUNCTIONS; PHOTONS; SILICON;

PHOTODETECTORS;

EID: 84884682317     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2013.2278894     Document Type: Article

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