Bias-selective dual-operation-mode ultraviolet schottky-barrier photodetectors fabricated on high-resistivity homoepitaxial GaN

IEEE Photonics Technology Letters

Volumn 24, Issue 24, 2012, Pages 2203-2205

  Xie, Feng ^a   Lu, Hai ^a   Chen, Dunjun ^a   Ren, Fangfang ^a   Zhang, Rong ^a   Zheng, Youdou ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

Dual operation mode; GaN; homoepitaxy; Schottky barrier photodetector

Indexed keywords

ACTIVE LAYER; DEPLETION MODES; FORWARD BIAS; GAN; GAN SUBSTRATE; HOMOEPITAXIAL; HOMOEPITAXIAL LAYERS; HOMOEPITAXY; LOW DEFECT DENSITIES; OPERATION MODE; PHOTORESPONSIVITY; REJECTION RATIOS; RESPONSE SPEED; SCHOTTKY BARRIERS; ULTRA-VIOLET; ZERO BIAS;

METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTODETECTORS; PHOTONS;

GALLIUM NITRIDE;

EID: 84870567657     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2012.2222022     Document Type: Article

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