Shift of responsive peak in GaN-based metal-insulator-semiconductor photodetectors

Applied Physics Letters

Volumn 100, Issue 12, 2012, Pages

  You, Kun ^a,b   Jiang, Hong ^a   Li, Dabing ^a   Sun, Xiaojuan ^a,b   Song, Hang ^a   Chen, Yiren ^a,b   Li, Zhiming ^a   Miao, Guoqing ^a   Liu, Hongbo ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

[No Author keywords available]

Indexed keywords

GAN LAYERS; METAL-INSULATOR-SEMICONDUCTORS; NEGATIVE BIAS; RED-SHIFTED; SAPPHIRE SUBSTRATES; ULTRA-VIOLET PHOTODETECTORS;

GALLIUM NITRIDE; MIS DEVICES; PHOTODETECTORS; SAPPHIRE; SILICON NITRIDE;

GALLIUM ALLOYS;

EID: 84859531045     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3696025     Document Type: Article

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