Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate

Solid-State Electronics

Volumn 57, Issue 1, 2011, Pages 39-42

  Xie, Feng ^a   Lu, Hai ^a   Xiu, Xiangqian ^a   Chen, Dunjun ^a   Han, Ping ^a   Zhang, Rong ^a   Zheng, Youdou ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

Gain mechanism; GaN; Homoepitaxy; MSM; Photodetector

Indexed keywords

APPLIED BIAS; DISLOCATION DENSITIES; GAIN MECHANISM; GAN; GAN LAYERS; GAN SUBSTRATE; HIGH-FIELD; HOMOEPITAXIAL; HOMOEPITAXIAL LAYERS; HOMOEPITAXY; ILLUMINATION CONDITIONS; MAPPING TECHNIQUES; METAL SEMICONDUCTOR METAL; MSM; MSM PHOTODETECTOR; OPTICAL POWER DENSITY; PHOTORESPONSIVITY; REJECTION RATIOS; ROOM TEMPERATURE; ULTRA-VIOLET PHOTODETECTORS;

DEFECT DENSITY; GALLIUM NITRIDE; OPTOELECTRONIC DEVICES; PHOTODETECTORS;

GALLIUM ALLOYS;

EID: 79951678925     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.12.005     Document Type: Article

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