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Journal of Physics D: Applied Physics

Volumn 46, Issue 30, 2013, Pages

ZnO-based ultraviolet avalanche photodetectors

(6) Yu, J a,b Shan, C X a Huang, X M c Zhang, X W a,b Wang, S P a Shen, D Z a

a CHANGCHUN INSTITUTE OF OPTICS (China)

b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES (China)

c NANJING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE GAINS; AVALANCHE MULTIPLICATION; AVALANCHE PHOTODETECTOR (APD); INSULATION LAYERS; IONIZATION PROCESS; RESPONSIVITY; UV PHOTODETECTORS; ZINC OXIDE (ZNO);

IMPACT IONIZATION; PHOTODETECTORS; PHOTONS;

ZINC OXIDE;

EID: 84880226159 PISSN: 00223727 EISSN: 13616463 Source Type: Journal
DOI: 10.1088/0022-3727/46/30/305105 Document Type: Article

Times cited : (56)

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