Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer

Applied Physics Letters

Volumn 102, Issue 23, 2013, Pages

  Xie, X H ^a,b   Zhang, Z Z ^a   Li, B H ^a   Wang, S P ^a   Jiang, M M ^a   Shan, C X ^a   Zhao, D X ^a   Chen, H Y ^a,b   Shen, D Z ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANTI-REFLECTION LAYERS; ELECTRICAL PARTS; METAL SEMICONDUCTOR INTERFACE; MOTT POTENTIAL; PHOTORESPONSES; SPECTRAL RESPONSE; ULTRA-VIOLET PHOTODETECTORS; VALENCE BAND OFFSETS;

HOT ELECTRONS; PHOTONS;

PHOTODETECTORS;

EID: 84879068588     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4811153     Document Type: Article

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