Fabrication and characterization of metal-semiconductor-metal (MSM) ultraviolet photodetectors on undoped GaN/sapphire grown by MBE

Journal of Crystal Growth

Volumn 218, Issue 1, 2000, Pages 1-6

  Xu, H Z ^a,b,c   Wang, Z G ^a   Kawabe, M ^b   Harrison, I ^c   Ansell, B J ^c   Foxon, C T ^c  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; FILM GROWTH; MOLECULAR BEAM EPITAXY; NITRIDES; PHOTOCONDUCTING DEVICES; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR METAL BOUNDARIES;

GALLIUM NITRIDES; METAL-SEMICONDUCTOR-METAL (MSM) ULTRAVIOLET DETECTORS;

ULTRAVIOLET DETECTORS;

EID: 0034274369     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00540-6     Document Type: Article

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