SCOPUS 정보 검색 플랫폼

Semiconductor Science and Technology

Volumn 28, Issue 9, 2013, Pages

Demonstration of a large-area AlGaN/GaN Schottky barrier photodetector on Si with high detection limit

(5) Kumar, Manoj a Lee, Chang Yong a Sekiguchi, Hiroto a Okada, Hiroshi a Wakahara, Akihiro a

a TOYOHASHI UNIVERSITY OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DETECTION LIMITS; DIFFERENTIAL RESISTANCES; HIGH QUALITY; OPTICAL POWER DENSITY; RELATIVE INTENSITY; RESPONSIVITY; SCHOTTKY BARRIERS; SPECTRAL RESPONSE;

GALLIUM NITRIDE; PHOTODETECTORS; SCHOTTKY BARRIER DIODES; SILICON;

PHOTONS;

EID: 84883199469 PISSN: 02681242 EISSN: 13616641 Source Type: Journal
DOI: 10.1088/0268-1242/28/9/094005 Document Type: Article

Times cited : (18)

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