Fabrication of ZnO nanorod array-based photodetector with high sensitivity to ultraviolet

Physica B: Condensed Matter

Volumn 404, Issue 21, 2009, Pages 4282-4285

  Li, Yingying ^a   Dong, Xiang ^a   Cheng, Chuanwei ^a   Zhou, Xuechao ^a   Zhang, Peigen ^b   Gao, Junshan ^a   Zhang, Haiqian ^a  

^a NANJING UNIVERSITY OF AERONAUTICS AND ASTRONAUTICS   (China)

^b Louisiana State University   (United States)

Author keywords

Array; Nanorods; Photocurrent; Photoresponse; Zinc oxide

Indexed keywords

APPLIED VOLTAGES; ARRAY; AU ELECTRODES; BARRIER HEIGHTS; CHEMICAL ROUTES; CONDUCTION ELECTRONS; EXCELLENT PERFORMANCE; EXPONENTIAL CURVES; HIGH QUALITY; HIGH SENSITIVITY; IV CHARACTERISTICS; NANOSCALE DEVICE; OXYGEN IONS; PHOTOGENERATED HOLES; PHOTORESPONSE; PHOTORESPONSES; RELAXATION TIME CONSTANT; REPRODUCIBILITIES; SCHOTTKY BARRIERS; ULTRA VIOLET DETECTION; WELL-ALIGNED; ZNO NANOROD; ZNO NANOROD ARRAYS; ZNO NANOSTRUCTURES;

ELECTRONS; FABRICATION; HYDROTHERMAL SYNTHESIS; NANORODS; OPTOELECTRONIC DEVICES; OXYGEN; PHOTOCURRENTS; SCHOTTKY BARRIER DIODES; ZINC; ZINC OXIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 71149106067     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.08.011     Document Type: Article

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